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Molecular-Ion Effects in Backscattering from Aligned Silicon Crystals

Tombrello, T. A. and Caywood, J. M. (1973) Molecular-Ion Effects in Backscattering from Aligned Silicon Crystals. Physical Review B, 8 (7). pp. 3065-3070. ISSN 0556-2805. http://resolver.caltech.edu/CaltechAUTHORS:TOMprb73

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Abstract

We have observed the proton spectra from equal-velocity beams of H+, H2+, and H3+ incident on aligned silicon crystals. Data for both axial and planar channeling show that the dechanneling is successively greater for the H2+ and H3+ ions than for protons. Since the depth at which dechanneling occured can be deduced from the energy spectrum of the backscattered protons, the comparison of the proton spectrum from molecular-ion bombardment with that produced by incident protons allows us to study the history of the motion in the crystal of the interacting protons from a given molecular ion.


Item Type:Article
Additional Information:©1973 The American Physical Society Received 8 March 1973 The authors wish to thank T.A. Weaver for his contribution to the development of the mathematical models that were used in the analysis of our data.
Record Number:CaltechAUTHORS:TOMprb73
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:TOMprb73
Alternative URL:http://dx.doi.org/10.1103/PhysRevB.8.3065
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:6220
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:28 Nov 2006
Last Modified:26 Dec 2012 09:18

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