Nikzad, Shouleh and Yu, Qiuming and Smith, Aimée L. and Jones, Todd J. and Tombrello, T. A. and Elliott, S. Tom (1998) Direct detection and imaging of low-energy electrons with delta-doped charge-coupled devices. Applied Physics Letters, 73 (23). pp. 3417-3419. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:NIKapl98
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We report the use of delta-doped charge-coupled devices (CCDs) for direct detection of electrons in the 50–1500 eV energy range. We show that modification of the CCD back surface by molecular beam epitaxy can greatly improve sensitivity to low-energy electrons by introducing an atomically abrupt dopant profile to eliminate the dead layer. Using delta-doped CCDs, we have extended the energy threshold for detection of electrons by over an order of magnitude. We have also measured high gain in response to low-energy electrons using delta-doped CCDs. The effect of multiple electron hole pair production on the observed signals is discussed. Electrons have been directly imaged with a delta-doped CCD in the 250–750 eV range.
|Additional Information:||©1998 American Institute of Physics. (Received 24 July 1998; accepted 6 October 1998) The authors gratefully acknowledge the invaluable assistance of Dr. M.E. Hoenck, Dr. L.D. BEll, Dr. S. Manion, Dr. T. Van Zandt, W. Proniawicz, and Professor L.C. Kimmerling. The work presented in this letter was performed by the Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, and was jointly funded by the Caltech President's Fund and the NASA Office of Space Science.|
|Subject Keywords:||silicon; elemental semiconductors; electron detection; silicon radiation detectors; CCD image sensors; molecular beam epitaxial growth; semiconductor growth|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||04 Dec 2006|
|Last Modified:||26 Dec 2012 09:20|
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