Masuhr, A. and Bracht, H. and Stolwijk, N. A. and Overhof, H. and Mehrer, H. (1999) Point defects in silicon after zinc diffusion - a deep level transient spectroscopy and spreading-resistance profiling study. Semiconductor Science and Technology, 14 (5). pp. 435-440. ISSN 0268-1242. http://resolver.caltech.edu/CaltechAUTHORS:MASsst99
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We present results from spreading-resistance profiling and deep level transient spectroscopy on Si after Zn diffusion at 1294 K. Concentration profiles of substitutional in dislocation-free and highly dislocated Si are described by a diffusion mechanism involving interstitial-substitutional exchange. Additional annealing at 873 K following quenching from the diffusion temperature is required in the case of dislocation-free Si to electrically activate . The formation of complexes of with unwanted impurities upon quenching is discussed. Additional Ni diffusion experiments as well as total energy calculations suggest that Ni is a likely candidate for the passivation of Zns. From total energy calculations we find that the formation of complexes involving Zn and Ni depends on the position of the Fermi level. This explains differences in results from spreading-resistance profiling and deep level transient spectroscopy on near-intrinsic and p-type Si, respectively.
|Additional Information:||Copyright © Institute of Physics and IOP Publishing Limited 1999. Received 3 April 1998, accepted for publication 4 January 1999. Print publication: Issue 5 (May 1999).|
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|Deposited On:||05 Dec 2006|
|Last Modified:||26 Dec 2012 09:20|
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