Ting, D. Z.-Y. and Yu, E. T. and Collins, D. A. and Chow, D. H. and McGill, T. C. (1990) Modeling of novel heterojunction tunnel structures. Journal of Vacuum Science and Technology B, 8 (4). pp. 810-816. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:TINjvstb90
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We have implemented a simple model that allows realistic yet rapid simulation of conventional as well as interband resonant tunneling devices. Using this model we have studied GaAs/AlAs asymmetric triple barrier structures and found that coherence between the quasibound states in the two quantum wells should be observable in the I–V characteristics of the devices. We have also examined InAs–GaSb–InAs broken-gap interband tunnel devices and found that, despite the absence of classically forbidden barrier regions, a resonant tunneling process is involved in producing the observed negative differential resistance. Furthermore, we have found that maximum peak current densities should be found in devices with GaSb layer thicknesses corresponding to a single, rather than a multiple transmission resonance peak in the broken-gap region.
|Additional Information:||© 1990 American Vacuum Society (Received 31 January 1990; accepted 10 April 1990) The authors would like to thank Y.C. Chang, J.R. Söderström, M.K. Jackson, and Y. Rajakarunanayake for helpful discussions. This work was supported by the Office of Naval Research (ONR) under Grant No. N00014-89-J-1141.|
|Subject Keywords:||TUNNEL DIODES; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; BARRIER HEIGHT; QUANTUM WELL STRUCTURES; IV CHARACTERISTIC; INDIUM ARSENIDES; GALLIUM ANTIMONIDES; CURRENT DENSITY; HETEROJUNCTIONS; MATHEMATICAL MODELS|
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|Deposited On:||05 Dec 2006|
|Last Modified:||26 Dec 2012 09:20|
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