Demonstration of an erbium-doped microdisk laser on a silicon chip

Abstract

An erbium-doped microlaser is demonstrated utilizing SiO2 microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering-gallery-type modes (WGM's) with intrinsic optical quality factors of up to 6×10^7 and were doped with trivalent erbium ions (peak concentration ~3.8×10^20 cm^−3) using MeV ion implantation. Coupling to the fundamental WGM of the microdisk resonator was achieved by using a tapered optical fiber. Upon pumping of the 4I15/2-->4I13/2 erbium transition at 1450 nm, a gradual transition from spontaneous to stimulated emission was observed in the 1550-nm band. Analysis of the pump-output power relation yielded a pump threshold of 43 µW and allowed measuring the spontaneous emission coupling factor: beta[approximate]1×10^−3.