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Steady-state thermally annealed GaAs with room-temperature-implanted Si

Masuyama, A. and Nicolet, M.-A. and Golecki, I. and Tandon, J. L. and Sadana, D. K. and Washburn, J. (1980) Steady-state thermally annealed GaAs with room-temperature-implanted Si. Applied Physics Letters, 36 (9). pp. 749-751. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:MASapl80

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Abstract

Semi-insulating Cr-doped single-crystal GaAs samples were implanted at room temperature with 300-keV Si ions in the dose range of (0.17–2.0)×1015 cm–2 and were subsequently steady-state annealed at 900 and 950°C for 30 min in a H2 ambient with a Si3N4 coating. Differential Hall measurements showed that an upper threshold of about 2×1018/cm3 exists for the free-electron concentration. The as-implanted atomic-Si profile measured by SIMS follows the theoretical prediction, but is altered during annealing. The Cr distribution also changes, and a band of dislocation loops ~2–3 kÅ wide is revealed by cross-sectional TEM at a mean depth of Rp~3 kÅ. Incomplete electrical activation of the Si is shown to be the primary cause for the effect.


Item Type:Article
Additional Information:©1980 The American Physical Society. Received 3 December 1979; accepted for publication 22 February 1980. We thank M. Kreitman and C. Litton (Wright-Patterson AFB) for the IR absorption measurements, D. Tonn (Caltech) for the Si implantations, E. Babcock (Rockwell Electronics Research Center) for depositing the silicon nitride films, and C.A. Evans, Jr. (Charles Evans & Associates) for the SIMS results. We acknowledge the assistance of F.H. Eisen (Rockwell Electronics Research Center) in profile calculations. The work of the first four authors was supported in part by the Advanced Research Project Agency of the Department of Defense and was monitored by the Air Force Office of Scientific Research under Contract No. F49620-77-C-0087; at the Lawrence Berkeley Laboratory, the work was supported by the Department of Energy through the Materials and Molecular Research Division.
Subject Keywords:SEMICONDUCTOR MATERIALS; GALLIUM ARSENIDES; ION IMPLANTATION; STEADY–STATE CONDITIONS; ANNEALING; SILICON; MEDIUM TEMPERATURE; CHROMIUM IONS; DOPED MATERIALS; MONOCRYSTALS; KEV RANGE; VERY HIGH TEMPERATURE; SILICON NITRIDES; COATINGS; HALL EFFECT; ELECRON DENSITY; MATHEMATICAL MODELS; MASS SPECTROSCOPY; SECONDARY EMISSION
Record Number:CaltechAUTHORS:MASapl80
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:MASapl80
Alternative URL:http://dx.doi.org/10.1063/1.91637
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:6395
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:07 Dec 2006
Last Modified:26 Dec 2012 09:20

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