Yang, H. Y. and Zhao, X.-A. (1988) Investigation of cosputtered W–C thin films as diffusion barriers. Journal of Vacuum Science and Technology A, 6 (3). pp. 1646-1649. ISSN 0734-2101. http://resolver.caltech.edu/CaltechAUTHORS:YANjvsta88
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Polycrystalline thin films of W–C were deposited on single-crystal <111>Si or SiO2 substrates by rf planar magnetron cosputtering of graphite (C) and W targets. The performance of cosputtered W75C25 thin films as diffusion barriers between a <111>Si substrate and metallic overlayers of Ag, Au, or Al was investigated. Backscattering spectrometry and x-ray diffraction are used to detect metallurgical interactions. Four-point probe measurement of resistance is employed to monitor the electrical stability of the metallization schemes upon thermal annealing in a vacuum for 30 min in temperature ranges from 500 to 700 °C. The electrical resistivity of W75C25 films is 140 µOmega cm. A W75C25 layer 1100 Å thick prevents metallurgical interdiffusion and reaction between Au or Ag overlayers and the <111>Si substrates up to 700 °C, and between an Al overlayer and the <111>Si substrate up to 450 °C.
|Additional Information:||© 1988 American Vacuum Society (Received 17 September 1987; accepted 23 November 1987)|
|Subject Keywords:||THIN FILMS; TUNGSTEN ALLOYS; ELECTRICAL PROPERTIES; CARBON COMPOUNDS; SPUTTERING; DIFFUSION BARRIERS; STABILITY; SILVER; GOLD; GRAPHITE; TUNGSTEN CARBIDES; SILICON; SILICA; PERFORMANCE; ATOM TRANSPORT; FABRICATION; DIFFUSION; HIGH TEMPERATURE; VERY HIGH TEMPERATURE|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||10 Dec 2006|
|Last Modified:||26 Dec 2012 09:21|
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