Lilly, M. P. and Reno, J. L. and Simmons, J. A. and Spielman, I. B. and Eisenstein, J. P. and Pfeiffer, L. N. and West, K. W. and Hwang, E. H. and Das Sarma, S. (2003) Resistivity of dilute 2D electrons in an undoped GaAs heterostructure. Physical Review Letters, 90 (5). Art. No. 056806. ISSN 0031-9007. http://resolver.caltech.edu/CaltechAUTHORS:LILprl03
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We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, 0.16×10^(10) to 7.5×10^(10) cm^–2, are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This nonmonotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk, and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured.
|Additional Information:||©2003 The American Physical Society. Received 8 October 2002; published 7 February 2003. We acknowledge outstanding technical assistance from W. Baca and R. Dunn. This work has been supported by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy. Sandia is a multi-program laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under Contract No. DE-AC04-94AL85000.|
|Subject Keywords:||gallium arsenide; aluminium compounds; two-dimensional electron gas; high electron mobility transistors; electron density; impurity scattering; electrical resistivity; metal-insulator transition|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||13 Dec 2006|
|Last Modified:||26 Dec 2012 09:22|
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