A Simple Derivation of Field-Effect Transistor Characteristics
- Creators
- Middlebrook, R. D.
Abstract
In the conventional treatment of the field effect transistor, the first step is the specification of an impurity profile that describes the nature of the gate-channel contact. Solutions for the static and small-signal characteristics are then valid only for the particular impurity profile chosen, and must be repeated from the beginning for different structures. The purpose of this communication is to present a simple, though approximate, development of the characteristics of an FET without specifying the detailed nature of the structure. The charge-control approach is used, and it is shown that in the pinch-off region the relation between the drain current and the gate-source voltage is approximately square law. The results are applicable to all gate-channel structures, including the insulated gate types.
Additional Information
© 1963 IEEE. Received May 13. 1963. The work reported here was supported in part by funds made available by the Jet Propulsion Laboratory, California Institute of Technology. Pasadena, under NASA Contract No. NAS 7-100.Attached Files
Published - 01444388.pdf
Files
Name | Size | Download all |
---|---|---|
md5:5379dc3ef7760d8c87c9ec1d4b5a5288
|
268.8 kB | Preview Download |
Additional details
- Eprint ID
- 65947
- Resolver ID
- CaltechAUTHORS:20160405-161455616
- NASA/JPL/Caltech
- NAS 7-100
- Created
-
2016-04-06Created from EPrint's datestamp field
- Updated
-
2021-11-10Created from EPrint's last_modified field