Zhao, Bin and Chen, T. R. and Yariv, Amnon (1992) The gain and carrier density in semiconductor lasers under steady-state and transient conditions. IEEE Journal of Quantum Electronics, 28 (6). pp. 1479-1486. ISSN 0018-9197 http://resolver.caltech.edu/CaltechAUTHORS:ZHAieeejqe92
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Abstract
The carrier distribution functions in a semiconductor crystal in the presence of a strong optical field are obtained. These are used to derive expressions for the gain dependence on the carrier density and on the optical intensity-the gain suppression effect. A general expression for high-order nonlinear gain coefficients is obtained. This formalism is used to describe the carrier and power dynamics in semiconductor lasers above and below threshold in the static and transient regimes.
| Item Type: | Article |
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| Additional Information: | © Copyright 1992 IEEE. Reprinted with permission. Manuscript received March 6, 1991; revised August 30, 1992. This work was supported by the Office of Naval Research, the National Science Foundation, and the Army Research Office. |
| Record Number: | CaltechAUTHORS:ZHAieeejqe92 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:ZHAieeejqe92 |
| Alternative URL: | http://dx.doi.org/10.1109/3.135300 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 6842 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 26 Dec 2006 |
| Last Modified: | 26 Dec 2012 09:25 |
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