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The gain and carrier density in semiconductor lasers under steady-state and transient conditions

Zhao, Bin and Chen, T. R. and Yariv, Amnon (1992) The gain and carrier density in semiconductor lasers under steady-state and transient conditions. IEEE Journal of Quantum Electronics, 28 (6). pp. 1479-1486. ISSN 0018-9197. http://resolver.caltech.edu/CaltechAUTHORS:ZHAieeejqe92

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Abstract

The carrier distribution functions in a semiconductor crystal in the presence of a strong optical field are obtained. These are used to derive expressions for the gain dependence on the carrier density and on the optical intensity-the gain suppression effect. A general expression for high-order nonlinear gain coefficients is obtained. This formalism is used to describe the carrier and power dynamics in semiconductor lasers above and below threshold in the static and transient regimes.


Item Type:Article
Additional Information:© Copyright 1992 IEEE. Reprinted with permission. Manuscript received March 6, 1991; revised August 30, 1992. This work was supported by the Office of Naval Research, the National Science Foundation, and the Army Research Office.
Record Number:CaltechAUTHORS:ZHAieeejqe92
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:ZHAieeejqe92
Alternative URL:http://dx.doi.org/10.1109/3.135300
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:6842
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:26 Dec 2006
Last Modified:26 Dec 2012 09:25

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