Gates, S. M. and Koleske, D. D. and Heath, J. R. and Copel, M. (1993) Epitaxial Si films on Ge(100) grown via H/Cl exchange. Applied Physics Letters, 62 (5). pp. 510-512. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:GATapl93
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Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures of Si2H6 and Si2Cl6, maintaining chlorine and hydrogen surface termination. At 465 °C, film growth rate is roughly 2 monolayer per cycle (one cycle equals 1 Si2H6 and 1 Si2Cl6 exposure). At 475 °C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.
|Additional Information:||Copyright © 1993 American Institute of Physics. Received 13 August 1992; accepted 25 November 1992. The authors thank J. Cotte for SIMS analysis. This work is supported by the Office of Naval Research under Contract No. N00014-91-C-0080.|
|Subject Keywords:||SILICON; GERMANIUM; VAPOR PHASE EPITAXY; MORPHOLOGY; TEMPERATURE EFFECTS; MICROSTRUCTURE; SURFACTANTS; RESIDUAL STRESSES; STRESS RELAXATION; SURFACE REACTIONS|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||04 Jan 2007|
|Last Modified:||26 Dec 2012 09:27|
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