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Epitaxial Si films on Ge(100) grown via H/Cl exchange

Gates, S. M. and Koleske, D. D. and Heath, J. R. and Copel, M. (1993) Epitaxial Si films on Ge(100) grown via H/Cl exchange. Applied Physics Letters, 62 (5). pp. 510-512. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:GATapl93

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Abstract

Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures of Si2H6 and Si2Cl6, maintaining chlorine and hydrogen surface termination. At 465 °C, film growth rate is roughly 2 monolayer per cycle (one cycle equals 1 Si2H6 and 1 Si2Cl6 exposure). At 475 °C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.


Item Type:Article
Additional Information:Copyright © 1993 American Institute of Physics. Received 13 August 1992; accepted 25 November 1992. The authors thank J. Cotte for SIMS analysis. This work is supported by the Office of Naval Research under Contract No. N00014-91-C-0080.
Subject Keywords:SILICON; GERMANIUM; VAPOR PHASE EPITAXY; MORPHOLOGY; TEMPERATURE EFFECTS; MICROSTRUCTURE; SURFACTANTS; RESIDUAL STRESSES; STRESS RELAXATION; SURFACE REACTIONS
Record Number:CaltechAUTHORS:GATapl93
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:GATapl93
Alternative URL:http://dx.doi.org/10.1063/1.108895
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:6981
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:04 Jan 2007
Last Modified:26 Dec 2012 09:27

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