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Radiation-induced interface phenomena: Decoration of high-energy density ion tracks

Ingemarsson, P. Anders and Sundqvist, Bo U. R. and Nieh, C. W. and Tombrello, Thomas A. (1989) Radiation-induced interface phenomena: Decoration of high-energy density ion tracks. Applied Physics Letters, 54 (16). pp. 1513-1515. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:INGapl89

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Abstract

The effect of 20 MeV Cl4 + ions incident on Au-SiO2 and Ag-SiO2 interfaces was investigated using high-resolution transmission electron microscopy. Cross-sectional micrographs expose beam-induced gold interfacial transport and migration into the SiO2. No such migration was observed for silver films. The relevance of this phenomenon to the adhesion improvement found at corresponding irradiation doses is discussed.


Item Type:Article
Additional Information:©1989 The American Physical Society. Received 28 October 1988; accepted 31 January 1989. This work was supported in part at California Institute of Technology under the National Science Foundation’s Materials Science Group Program (DMR84-21119), and partly by the National Swedish Board for Technical Development. We are especially indebted to Ulf Magnusson and Anders Soderbarg who generously provided a large part of the samples. Goran Possnert and Jonas Astrom are gratefully acknowledged for their valuable assistance with the accelerator.
Subject Keywords:SILICA; GOLD; SILVER; PHYSICAL RADIATION EFFECTS; DIFFUSION; NEUTRAL–PARTICLE TRANSPORT; THIN FILMS; FILMS; MEV RANGE 10–100; CHLORINE IONS; TRANSMISSION ELECTRON MICROSCOPY; ADHESION; INTERFACE PHENOMENA; HIGH–TC SUPERCONDUCTORS
Record Number:CaltechAUTHORS:INGapl89
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:INGapl89
Alternative URL:http://dx.doi.org/10.1063/1.101383
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:7017
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:05 Jan 2007
Last Modified:26 Dec 2012 09:28

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