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Nanocrystal seeding: A low temperature route to polycrystalline Si films

Heath, J. R. and Gates, S. M. and Chess, C. A. (1994) Nanocrystal seeding: A low temperature route to polycrystalline Si films. Applied Physics Letters, 64 (26). pp. 3569-3571. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:HEAapl94

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Abstract

A novel method is presented for growth of polycrystalline silicon films on amorphous substrates at temperatures of 540–575 °C. Grain nucleation and grain growth are performed in two steps, using Si nanocrystals as nuclei ("seeds"). The nanocrystal seeds are produced by excimer laser photolysis of disilane in a room temperature flow cell. Film (grain) growth occurs epitaxially on the seeds in a separate thermal chemical vapor deposition (CVD) step, with growth rates 10–100 times higher than similar CVD growth rates on crystal Si. Grain size and CVD growth rates are dependent on seed coverage, for seed coverage <0.2 monolayers.


Item Type:Article
Additional Information:©1994 The American Physical Society. Received 27 January 1994; accepted 27 April 1994.
Subject Keywords:SILICON; POLYCRYSTALS; FILM GROWTH; NANOSTRUCTURES; EXCIMER LASERS; EPITAXIAL LAYERS; PHOTOLYSIS; GRAIN GROWTH; TEMPERATURE RANGE 0400–1000 K
Record Number:CaltechAUTHORS:HEAapl94
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:HEAapl94
Alternative URL:http://dx.doi.org/10.1063/1.111200
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:7066
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:08 Jan 2007
Last Modified:26 Dec 2012 09:28

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