Heath, J. R. and Gates, S. M. and Chess, C. A. (1994) Nanocrystal seeding: A low temperature route to polycrystalline Si films. Applied Physics Letters, 64 (26). pp. 3569-3571. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:HEAapl94
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A novel method is presented for growth of polycrystalline silicon films on amorphous substrates at temperatures of 540–575 °C. Grain nucleation and grain growth are performed in two steps, using Si nanocrystals as nuclei ("seeds"). The nanocrystal seeds are produced by excimer laser photolysis of disilane in a room temperature flow cell. Film (grain) growth occurs epitaxially on the seeds in a separate thermal chemical vapor deposition (CVD) step, with growth rates 10–100 times higher than similar CVD growth rates on crystal Si. Grain size and CVD growth rates are dependent on seed coverage, for seed coverage <0.2 monolayers.
|Additional Information:||© 1994 American Institute of Physics. Received 27 January 1994; accepted 27 April 1994.|
|Subject Keywords:||SILICON; POLYCRYSTALS; FILM GROWTH; NANOSTRUCTURES; EXCIMER LASERS; EPITAXIAL LAYERS; PHOTOLYSIS; GRAIN GROWTH; TEMPERATURE RANGE 0400–1000 K|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||08 Jan 2007|
|Last Modified:||25 Apr 2017 19:52|
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