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Internal photoemission from quantum well heterojunction superlattices by phononless free-carrier absorption

Chiu, L. C. and Smith, J. S. and Margalit, S. and Yariv, A. (1983) Internal photoemission from quantum well heterojunction superlattices by phononless free-carrier absorption. Applied Physics Letters, 43 (4). pp. 331-332. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:CHIapl83

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Abstract

The possibility of phononless free-carrier absorption in quantum well heterojunction superlattices was investigated. Order of magnitude calculation showed that the absorption coefficient was significantly enhanced over the phonon-assisted process. Important aspects of the enhancement in the design of infrared photodetectors are discussed.


Item Type:Article
Additional Information:© 1983 American Institute of Physics. Received 28 March 1983; accepted 15 May 1983. This work is supported by the National Science Foundation and the Air Force Office of Scientific Research. One of us (JSS) gratefully acknowledges the support of the Fannie and John Hertz Foundation.
Subject Keywords:heterojunctions; superlattices; charge carriers; absorptivity; electrons; barrier height; photodetectors; infrared radiation; phonons; quantum mechanics; photoemission
Record Number:CaltechAUTHORS:CHIapl83
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:CHIapl83
Alternative URL:http://dx.doi.org/10.1063/1.94345
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:7149
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:10 Jan 2007
Last Modified:26 Dec 2012 09:29

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