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GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinement

Aiki, K. and Nakamura, M. and Umeda, J. and Yariv, A. and Katzir, A. and Yen, H. W. (1975) GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinement. Applied Physics Letters, 27 (3). pp. 145-146. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:AIKapl75

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Abstract

Remarkable reduction of the threshold current density is achieved in GaAs-GaAlAs distributed-feedback diode lasers by adopting a separate-confinement heterostructure. The diodes are lased successfully at temperatures up to 340 °K under pulsed operation. The lowest threshold current density is 3 kA/cm^2 at 300 °K.


Item Type:Article
Additional Information:© 1975 American Institute of Physics. Received 21 April 1975; in final form 26 May 1975. Work sponsored by the Office of Naval Research. The authors would like to thank Dr. Y. Otomo and Dr. O. Nakada of the Central Research Laboratory, Hitcahi Ltd., for their continuous encouragement, S. Yamashita for his assistance in the experiment, and A. Gover of California Institute of Technology for helpful discussions.
Subject Keywords:SEMICONDUCTOR LASERS; THRESHOLD ENERGY; GALLIUM ARSENIDES; ALUMINIUM COMPOUNDS; OPERATION; SEMICONDUCTOR DIODES; EMISSION SPECTRA
Record Number:CaltechAUTHORS:AIKapl75
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:AIKapl75
Alternative URL:http://dx.doi.org/10.1063/1.88386
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:7236
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:25 Jan 2007
Last Modified:26 Dec 2012 09:30

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