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Comparison of differential gain in single quantum well and bulk double heterostructure lasers

Zhao, B. and Chen, T. R. and Yariv, A. (1991) Comparison of differential gain in single quantum well and bulk double heterostructure lasers. Electronics Letters, 27 (25). pp. 2343-2345. ISSN 0013-5194. http://resolver.caltech.edu/CaltechAUTHORS:ZHAel91

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Abstract

The differential gain in single quantum well and bulk double heterostructure lasers is compared. In variance with previous predictions, no differential gain enhancement is found in single quantum well structure lasers at room temperature. Only at low temperatures do the quantum well lasers possess higher differential gain than bulk double heterostructure lasers. The results have important implications in the area of high speed phenomena for these devices.


Item Type:Article
Additional Information:©1991 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE.
Subject Keywords:DH type, bulk double heterostructure, differential gain, low temperatures, room temperature, semiconductor lasers, single quantum well
Record Number:CaltechAUTHORS:ZHAel91
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:ZHAel91
Alternative URL:http://ieeexplore.ieee.org/iel1/2220/3456/00121349.pdf
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:734
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:21 Sep 2005
Last Modified:26 Dec 2012 08:41

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