Zhao, B. and Chen, T. R. and Yariv, A. (1991) Comparison of differential gain in single quantum well and bulk double heterostructure lasers. Electronics Letters, 27 (25). pp. 2343-2345. ISSN 0013-5194. http://resolver.caltech.edu/CaltechAUTHORS:ZHAel91
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The differential gain in single quantum well and bulk double heterostructure lasers is compared. In variance with previous predictions, no differential gain enhancement is found in single quantum well structure lasers at room temperature. Only at low temperatures do the quantum well lasers possess higher differential gain than bulk double heterostructure lasers. The results have important implications in the area of high speed phenomena for these devices.
|Additional Information:||©1991 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE.|
|Subject Keywords:||DH type, bulk double heterostructure, differential gain, low temperatures, room temperature, semiconductor lasers, single quantum well|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||21 Sep 2005|
|Last Modified:||26 Dec 2012 08:41|
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