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Parametric study of cavity length and mirror reflectivity in ultralow threshold quantum well InGaAs/AlGaAs lasers

Chen, T. R. and Zhao, B. and Eng, L. and Feng, J. and Zhuang, Y. H. and Yariv, A. (1995) Parametric study of cavity length and mirror reflectivity in ultralow threshold quantum well InGaAs/AlGaAs lasers. Electronics Letters, 31 (4). pp. 285-287. ISSN 0013-5194. http://resolver.caltech.edu/CaltechAUTHORS:CHEel95

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Abstract

Record low CW threshold currents of 16 μA at-room temperature and 21 μA at cryogenic temperature have been demonstrated in buried heterostructure strained layer, single quantum well InGaAs/AlGaAs lasers with a short cavity length and high reflectivity coatings.


Item Type:Article
Additional Information:© IEE 1995. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. This work was supported by the Office of Naval Research, ARPA, and the Air Force Office of Scientific Research.
Subject Keywords:SEMICONDUCTOR JUNCTION LASERS, SEMICONDUCTOR QUANTUM WELLS, LASER CAVITY RESONATORS
Record Number:CaltechAUTHORS:CHEel95
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:CHEel95
Alternative URL:http://dx.doi.org/10.1049/el:19950176
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:748
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:27 Sep 2005
Last Modified:26 Dec 2012 08:41

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