Chen, T. R. and Zhao, B. and Eng, L. and Feng, J. and Zhuang, Y. H. and Yariv, A. (1995) Parametric study of cavity length and mirror reflectivity in ultralow threshold quantum well InGaAs/AlGaAs lasers. Electronics Letters, 31 (4). pp. 285-287. ISSN 0013-5194. http://resolver.caltech.edu/CaltechAUTHORS:CHEel95
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Record low CW threshold currents of 16 μA at-room temperature and 21 μA at cryogenic temperature have been demonstrated in buried heterostructure strained layer, single quantum well InGaAs/AlGaAs lasers with a short cavity length and high reflectivity coatings.
|Additional Information:||© IEE 1995. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. This work was supported by the Office of Naval Research, ARPA, and the Air Force Office of Scientific Research.|
|Subject Keywords:||SEMICONDUCTOR JUNCTION LASERS, SEMICONDUCTOR QUANTUM WELLS, LASER CAVITY RESONATORS|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||27 Sep 2005|
|Last Modified:||26 Dec 2012 08:41|
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