Hoenk, Michael E. and Vahala, Kerry J. (1988) Cathodoluminescence of oval defects in GaAs/AlxGa1–xAs epilayers using an optical fiber light collection system. Applied Physics Letters, 53 (21). pp. 2062-2064. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:HOEapl88
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A cathodoluminescence system using a novel optical fiber light collection system is employed to study oval defects in GaAs/Alx Ga1–x As epilayers grown by molecular beam epitaxy. Spatially and spectrally resolved data on the luminescence of oval defects are presented. Oval defects are found to contain an enhanced concentration of gallium, which is consistent with current theories regarding the origin of these defects.
|Additional Information:||© 1988 American Institute of Physics. Received 4 May 1988; accepted for publication 14 September 1988. The authors would like to express their appreciation to Hadis Morkoc and Lars Eng for many helpful discussions. This work was supported by the Office of Naval Research and by Caltech’s Program in Advanced Technologies, sponsored by Aerojet General, General Motors, and TRW.|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||28 Feb 2007|
|Last Modified:||26 Dec 2012 09:32|
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