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Direct measurement of doping density and barrier lowering effect with bias in quantum wells

Xu, Y. and Shakouri, A. and Yariv, A. and Krabach, T. and Dejewski, S. (1995) Direct measurement of doping density and barrier lowering effect with bias in quantum wells. Electronics Letters, 31 (4). pp. 320-321. ISSN 0013-5194. http://resolver.caltech.edu/CaltechAUTHORS:XUYel95

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Abstract

An experimental method for determining the doping density in thin-sheet semiconductor material such as quantum wells (QWs) is demonstrated in GaAs/AlGaAs multiquantum-well infra-red photodetectors. The results agree very well with the conventional Hall measurement method. Barrier lowering effect with bias in QWs is determined experimentally.


Item Type:Article
Additional Information:© IEE 1995. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. This work is supported by the Advanced Research Projects Agency (ARPA), and by the US Air Force Office of Scientific Research.
Subject Keywords:SEMICONDUCTOR DOPING, SEMICONDUCTOR QUANTUM WELLS, INFRARED DETECTORS, INFRARED PHOTODETECTORS
Record Number:CaltechAUTHORS:XUYel95
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:XUYel95
Alternative URL:http://dx.doi.org/10.1049/el:19950180
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:749
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:27 Sep 2005
Last Modified:26 Dec 2012 08:41

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