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Gamma–ray spectroscopy with single–carrier collection in high–resistivity semiconductors

Malm, H. L. and Canali, C. and Mayer, J. W. and Nicolet, M–A. and Zanio, K. R. and Akutagawa, W. (1975) Gamma–ray spectroscopy with single–carrier collection in high–resistivity semiconductors. Applied Physics Letters, 26 (6). pp. 344-346. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:MALapl75

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Abstract

With the standard plane–parallel configuration of semiconductor detectors, good γ–ray spectra can only be obtained when both electrons and holes are completely collected. We show by calculations (and experiments) that with contacts of hemispherical configuration one can obtain γ–ray spectra of adequate resolution and with signal heights of nearly full amplitude even when only one type of carrier is collected. Experiments with CdTe detectors for which the µτ product for electrons is about 10^(3) times that of the holes confirm these calculations. The adoption of hemispherical contacts thus widens the range of high–resistivity semiconductors potentially acceptable for γ–ray detection at room temperature.


Item Type:Article
Additional Information:© 1975 American Institute of Physics. Received 2 December 1974. Work supported in part by the AEC (H. Wasson) through funds administered by the UCLA School of Nuclear Medicine (G. Huth).
Record Number:CaltechAUTHORS:MALapl75
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:MALapl75
Alternative URL:http://dx.doi.org/10.1063/1.88158
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:7560
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:05 Mar 2007
Last Modified:26 Dec 2012 09:32

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