CaltechAUTHORS
  A Caltech Library Service

Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure

Kane, B. E. and Eisenstein, J. P. and Wegscheider, W. and Pfeiffer, L. N. and West, K. W. (1994) Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure. Applied Physics Letters, 65 (25). pp. 3266-3268. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:KANapl94

[img]
Preview
PDF
See Usage Policy.

162Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:KANapl94

Abstract

We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1−xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 10^(10)/cm^2 to greater than 10^(11)/cm^2.


Item Type:Article
Additional Information:© 1994 American Institute of Physics. Received 7 April 1994; accepted 17 October 1994.
Subject Keywords:GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; QUANTUM WELLS; HETEROSTRUCTURES; OHMIC CONTACTS; CARRIER DENSITY; ELECTRIC FIELD EFFECTS; DESIGN
Record Number:CaltechAUTHORS:KANapl94
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:KANapl94
Alternative URL:http://dx.doi.org/10.1063/1.112432
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:7646
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:16 Mar 2007
Last Modified:26 Dec 2012 09:33

Repository Staff Only: item control page