Kane, B. E. and Eisenstein, J. P. and Wegscheider, W. and Pfeiffer, L. N. and West, K. W. (1994) Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure. Applied Physics Letters, 65 (25). pp. 3266-3268. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:KANapl94
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We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1−xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 10^(10)/cm^2 to greater than 10^(11)/cm^2.
|Additional Information:||© 1994 American Institute of Physics. Received 7 April 1994; accepted 17 October 1994.|
|Subject Keywords:||GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; QUANTUM WELLS; HETEROSTRUCTURES; OHMIC CONTACTS; CARRIER DENSITY; ELECTRIC FIELD EFFECTS; DESIGN|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||16 Mar 2007|
|Last Modified:||26 Dec 2012 09:33|
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