Published April 2017
| public
Journal Article
Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopy
Abstract
Surface defects on 4H-SiC wafers with an epitaxial layer grown by chemical vapor deposition (CVD) were observed using scanning electron microscopy (SEM). Commercially available epitaxial-wafers with four or eight deg-off surface from the [0001] toward the [1120] directions were used for this experiment. 3C-SiC particles, triangular-defects, comets, obtuse-triangular-shaped-defects and micro-holes were identified in the SEM images. This paper can be considered as a catalog of SEM images and descriptions of various surface defects for 4H-SiC wafers with a CVD-grown epilayer.
Additional Information
© The Author 2016. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. Received 20 July 2016; Editorial Decision 13 November 2016; Accepted 20 November 2016. Authors thank the Physics of SEM Group in Japanese Society of Microscopy for helpful discussion. The Novel Semiconductor Power Electronics Project Realizing Low Carbon Emission Society (2010–2014) by the Ministry of Economy, Trade and Industry (METI) and the New Energy and Industrial Technology Development Organization (NEDO) in Japan.Additional details
- Eprint ID
- 77040
- DOI
- 10.1093/jmicro/dfw107
- Resolver ID
- CaltechAUTHORS:20170428-080249226
- Ministry of Economy, Trade and Industry (Japan)
- New Energy and Industrial Technology Development Organization (NEDO)
- Created
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2017-04-28Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field