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GaAs/AlGaAs heterojunction Pnp bipolar transistors grown on (100) Si by molecular beam epitaxy

Won, T. and Litton, C. W. and Morkoç, H. and Yariv, A. (1988) GaAs/AlGaAs heterojunction Pnp bipolar transistors grown on (100) Si by molecular beam epitaxy. Electronics Letters, 24 (10). pp. 588-590. ISSN 0013-5194. http://resolver.caltech.edu/CaltechAUTHORS:WONel88

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Abstract

GaAs/AlGaAs Pnp heterojunction bipolar transistors (HBTs) were fabricated and tested on (100) Si substrates for the first time. A common-emitter current gain of β=8 was measured for the typical devices with an emitter area of 50×50 μm^2 at a collector current density of 1×10^(4) A/cm^2 with no output negative differential resistance up to 280 mA, highest current used. A very high base-collector breakdown voltage of 10 V was obtained. Comparing the similar structures grown on GaAs substrates, the measured characteristics clearly demonstrate that device grade hole injection can be obtained in GaAs on Si epitaxial layers despite the presence of dislocations.


Item Type:Article
Additional Information:© 1988 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. This work was funded by the United States Air Force Office of Scientific Research. The CALTECH portion of the research was funded by grants from ONR, AFOSR, ARO and NSF. H. Morkoć was partially funded by SDIO-IST through the Jet Propulsion Laboratory while he was a distinguished visiting scientist.
Subject Keywords:semiconductor devices and materials, bipolar devices, transistors, silicon
Record Number:CaltechAUTHORS:WONel88
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:WONel88
Alternative URL:http://ieeexplore.ieee.org/iel1/2220/432/00008276.pdf
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:801
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:06 Oct 2005
Last Modified:26 Dec 2012 08:41

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