Ma, W. and Meng, W. J. and Johnson, W. L. and Nicolet, M-A. and Nathan, M. (1988) Simultaneous planar growth of amorphous and crystalline Ni silicides. Applied Physics Letters, 53 (21). pp. 2033-2035. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:MAEapl88
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We report a solid-state interdiffusion reaction induced by rapid thermal annealing and vacuum furnace annealing in evaporated Ni/Si bilayers. Upon heat treatment of a Ni film overlaid on a film of amorphous Si evaporated from a graphite crucible, amorphous and crystalline silicide layers grow uniformly side by side as revealed by cross-sectional transmission electron microscopy and backscattering spectrometry. This phenomenon contrasts with the silicide formation behavior previously observed in the Ni-Si system, and constitutes an interesting counterpart of the solid-state interdiffusion-induced amorphization in Ni/Zr thin-film diffusion couples. Carbon impurity contained in the amorphous Si film stabilizes the amorphous phase. Kinetic and thermodynamic factors that account for the experimental findings are discussed.
|Additional Information:||Copyright © 1988 American Institute of Physics. (Received 5 April 1988; accepted 7 September 1988) The authors are indebted to Dr. B.S. Lim for his participation during the initial stage of this work, and G. Mendendilia (MML) for technical assistance. This work is supported at Caltech by National Science Foundation - Materials Research Groups grant DMR-8811795.|
|Subject Keywords:||NICKEL; NICKEL SILICIDES; HEAT TREATMENTS; AMORPHOUS STATE; IMPURITIES; BILAYERS; SILICON; FILM GROWTH; AMORPHOUS STATE; DIFFUSION; ATOM TRANSPORT; RBS; TRANSMISSION ELECTRON MICROSCOPY; AMORPHIZATION; CRYSTAL STRUCTURE|
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|Deposited On:||20 Aug 2007|
|Last Modified:||26 Dec 2012 09:40|
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