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Low-threshold room-temperature embedded heterostructure lasers

Lee, C. P. and Samid, I. and Gover, A. and Yariv, A. (1976) Low-threshold room-temperature embedded heterostructure lasers. Applied Physics Letters, 29 (6). pp. 365-367. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:LEEapl76

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Abstract

Room-temperature embedded double-heterostructure injection lasers have been fabricated using selective liquid phase epitaxial growth. Threshold current densities as low as 1.5 kA/cm^2 have been achieved in lasers grown through stripe windows opened in epitaxial GaAlAs masks.


Item Type:Article
Additional Information:© 1976 American Institute of Physics. Received 4 June 1976. The authors are grateful to Eric Mott for the fabrication of the laser heat sinks. Work supported by the Office of Naval Research and by the National Science Foundation Optical Communication Program.
Subject Keywords:SEMICONDUCTOR LASERS; THRESHOLD ENERGY; FABRICATION; EPITAXY; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; JUNCTION DIODES; EFFICIENCY
Record Number:CaltechAUTHORS:LEEapl76
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:LEEapl76
Alternative URL:http://dx.doi.org/10.1063/1.89081
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8626
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:31 Aug 2007
Last Modified:26 Dec 2012 09:40

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