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The effect of spatially dependent temperature and carrier fluctuations on noise in semiconductor lasers

Lang, Robert J. and Vahala, Kerry J. and Yariv, Amnon (1985) The effect of spatially dependent temperature and carrier fluctuations on noise in semiconductor lasers. IEEE Journal of Quantum Electronics, 21 (5). pp. 443-451. ISSN 0018-9197. http://resolver.caltech.edu/CaltechAUTHORS:LANieeejqe85a

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Abstract

The spatially dependent equations of motion for a single-mode semiconductor laser including Langevin source terms are derived and solved. The relative intensity, frequency, and field fluctuation spectra are derived and calculated. The results include low-frequency excess noise, frequency noise enhancement due to two forms of amplitude-phase coupling, and power-independent contributions to the linewidth.


Item Type:Article
Additional Information:© Copyright 1985 IEEE. Reprinted with permission. Manuscript received October 8, 1984; revised January 23, 1985. This work was supported in part by the Office of Naval Research, by the ITT Corporation, and by Rockwell International. R.J. Lang was supported in part by a fellowship from the National Science Foundation. K.J. Vahala was supported in part by a fellowship from IBM.
Record Number:CaltechAUTHORS:LANieeejqe85a
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:LANieeejqe85a
Alternative URL:http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=23082&arnumber=1072677&count=19&index=7
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Deposited On:12 Sep 2007
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