Mii, Y. J. and Karunasini, R. P> G. and Wang, K. L. and Bai, Gang (1989) Growth and characterization of doped GaAs/AlGaAs multiple quantum well structures on Si substrates for infrared detection. Journal of Vacuum Science and Technology B, 7 (2). pp. 341-344. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:MIIjvstb89
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Doped GaAs/AlGaAs multiple quantum well structures were grown on Si substrates by molecular-beam epitaxy. The crystallinity of the epitaxial layers was examined by cross-sectional transmission electron microscopy and an x-ray rocking curve technique. The threading dislocation density of the multiple quantum well region was estimated to be 108 cm–2 by transmission electron microscopy. The x-ray rocking curve measurement revealed a full width at half-maximum of 380 arcsec, with no superlattice peak observed. Electrical and optical characterizations by tunneling current and intersubband infrared absorption showed comparable properties with similar structures grown directly on a GaAs substrate. The effect of crystallinity on the electrical and optical properties of the multiple quantum well structures is discussed.
|Additional Information:||© 1989 American Vacuum Society. (Received 22 September 1988; accepted 22 September 1988) The authors would like to thank Dr. R. Alt at Aerospace Corporation for FTIR measurements. This work was supported in part by DOD-DRIP under ONR and ARO and by Intel-Micro program.|
|Subject Keywords:||QUANTUM WELL STRUCTURES; CRYSTAL DOPING; SILICON; SORPTIVE PROPERTIES; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY; X–RAY DIFFRACTION; DISLOCATIONS; TUNNEL EFFECT; INFRARED SPECTRA; INTERBAND TRANSITIONS; ELECTRICAL PROPERTIES; OPTICAL PROPERTIES; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; PHOTODETECTORS; CRYSTAL STRUCTURE|
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|Deposited On:||19 Sep 2007|
|Last Modified:||26 Dec 2012 09:42|
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