CaltechAUTHORS
  A Caltech Library Service

Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

Mii, Y. J. and Lin, T. J. and Kao, Y. C. and Wu, B. J. and Wang, K. L. and Nieh, C. W. and Jamieson, D. N. and Liu, J. K. (1988) Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates. Journal of Vacuum Science and Technology B, 6 (2). pp. 696-701. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:MIIjvstb88

[img]
Preview
PDF
See Usage Policy.

684Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:MIIjvstb88

Abstract

GaAs has been grown on porous Si directly and on Si buffer layer–porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.


Item Type:Article
Additional Information:© 1988 American Vacuum Society. (Received 5 September 1987; accepted 14 December 1987) The work performed by University of California, Los Angeles is supported in part by the Office of Naval Research and the Army Research Office. The research described in this paper was carried out in part by the Jet Propulsion Laboratory (JPL), California Institute of Technology, and was sponsored by the Strategic Defense Initiatives Organization, Innovative Science and Technology office, and the National Aeronautics and Space Administration. The work was performed as part of JPL's Center for Space Microelectronics Technology. One of us (C.W.N) acknowledges the support ofthe National Science Foundation under Grant No. DMR842119.
Subject Keywords:DIFFUSION; NEUTRAL–PARTICLE TRANSPORT; STACKING FAULTS; CRYSTAL DEFECTS; GALLIUM ARSENIDES; SILICON; POROUS MATERIALS; MOLECULAR BEAM EPITAXY; VAPOR DEPOSITED COATINGS
Record Number:CaltechAUTHORS:MIIjvstb88
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:MIIjvstb88
Alternative URL:http://dx.doi.org/10.1116/1.584395
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8815
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:19 Sep 2007
Last Modified:26 Dec 2012 09:42

Repository Staff Only: item control page