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The extra differential gain enhancement in multiple-quantum-well lasers

Zhao, B. and Chen, T. R. and Yariv, A. (1992) The extra differential gain enhancement in multiple-quantum-well lasers. IEEE Photonics Technology Letters, 4 (2). pp. 124-126. ISSN 1041-1135. http://resolver.caltech.edu/CaltechAUTHORS:ZHAieeeptl92

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Abstract

By accounting for the unavoidable thermal population of injected carriers in the optical confining layers it is found that the use of MQW's (multiple quantum wells) as active regions actually leads to an extra increase in differential gain. Specifically, the maximum differential gain increases with the number of wells in the QW structures. The transparency current density in the MQW structure does not scale as the number of QWs. These conclusions are at variance with presently accepted theory and have major implications for the design of high-speed, low-threshold semiconductor lasers.


Item Type:Article
Additional Information:© Copyright 1992 IEEE. Reprinted with permission. Manuscript received October 8, 1991; revised December 2, 1991. This work was supported by DAPPA, the Office of Naval Research, and the Air Force Office of Scientific Research.
Subject Keywords:carrier mobility, laser theory, semiconductor junction lasers
Record Number:CaltechAUTHORS:ZHAieeeptl92
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:ZHAieeeptl92
Alternative URL:http://dx.doi.org/10.1109/68.122336
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8874
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:24 Sep 2007
Last Modified:26 Dec 2012 09:43

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