Uomi, K. and Yoo, S. J. B. and Scherer, A. and Bhat, R. and Andreadakis, N. C. and Zah, C. E. and Koza, M. A. and Lee, T. P. (1994) Low threshold, room temperature pulsed operation of 1.5 μm vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer. IEEE Photonics Technology Letters, 6 (3). pp. 317-319. ISSN 1041-1135. http://resolver.caltech.edu/CaltechAUTHORS:UOMieeptl94
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Room temperature, pulsed operation of 1.5 μm vertical-cavity surface-emitting laser is demonstrated by the optimization of an InGaAs/InGaAsP multi-quantum well active layer, especially the number of quantum wells and the barrier thickness considering matched gain effect. Low threshold currents of 17 mA in 5×7 μm^2-devices and 25 mA in 7×10 μm^2-devices were achieved.
|Additional Information:||© Copyright 1994 IEEE. Reprinted with permission. Manuscript received September 9, 1993.|
|Subject Keywords:||III-V semiconductors, gallium arsenide, indium compounds, laser cavity resonators, semiconductor lasers|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||24 Sep 2007|
|Last Modified:||26 Dec 2012 09:43|
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