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Low threshold, room temperature pulsed operation of 1.5 μm vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer

Uomi, K. and Yoo, S. J. B. and Scherer, A. and Bhat, R. and Andreadakis, N. C. and Zah, C. E. and Koza, M. A. and Lee, T. P. (1994) Low threshold, room temperature pulsed operation of 1.5 μm vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer. IEEE Photonics Technology Letters, 6 (3). pp. 317-319. ISSN 1041-1135. http://resolver.caltech.edu/CaltechAUTHORS:UOMieeptl94

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Abstract

Room temperature, pulsed operation of 1.5 μm vertical-cavity surface-emitting laser is demonstrated by the optimization of an InGaAs/InGaAsP multi-quantum well active layer, especially the number of quantum wells and the barrier thickness considering matched gain effect. Low threshold currents of 17 mA in 5×7 μm^2-devices and 25 mA in 7×10 μm^2-devices were achieved.


Item Type:Article
Additional Information:© Copyright 1994 IEEE. Reprinted with permission. Manuscript received September 9, 1993.
Subject Keywords:III-V semiconductors, gallium arsenide, indium compounds, laser cavity resonators, semiconductor lasers
Record Number:CaltechAUTHORS:UOMieeptl94
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:UOMieeptl94
Alternative URL:http://dx.doi.org/10.1109/68.275476
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8878
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:24 Sep 2007
Last Modified:26 Dec 2012 09:43

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