Huang, Jin-Biao and Tung, Steve and Ho, Chih-Ming and Liu, Chang and Tai, Yu-Chong (1996) Improved micro thermal shear-stress sensor. IEEE Transactions on Instrumentation and Measurement, 45 (2). pp. 570-574. ISSN 0018-9456. http://resolver.caltech.edu/CaltechAUTHORS:HUAieeetim96
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Micro hot-film shear-stress sensors have been designed and fabricated by surface micromachining technology which is compatible with IC technology. A polysilicon strip, 2 μm×80 μm, is deposited on top of a thin silicon nitride film and functions as the sensor element. By using the sacrificial-layer technique, a cavity (a vacuum chamber of about 300 mtorr), 200×200×2 μm, is placed between the silicon nitride film and the silicon substrate. This cavity significantly increases the sensitivity of the sensor by reducing the heat loss to the substrate. The frequency response of the sensor, however, is degraded by the cavity. For comparison purposes, a sensor structure without a cavity has also been designed and fabricated on the same chip. When operated in a constant temperature mode, the cutoff frequencies of the sensors with and without a cavity can reach 9 and 130 kHz, respectively. Wind tunnel calibration of the sensor with a cavity shows a sensitivity of about 10 mV/Pa, which is about two orders of magnitude higher than other micromachined shear stress sensors.
|Additional Information:||© Copyright 1996 IEEE. Reprinted with permission. Manuscript received April 24, 1995; revised January 11, 1996. This work was supported by the AFOSR URI Project (University Research Institute).|
|Subject Keywords:||calibration, elemental semiconductors, heat transfer, integrated circuit modelling, integrated circuit technology, microsensors, shear strength, silicon, silicon compounds, stress measurement|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||25 Sep 2007|
|Last Modified:||26 Dec 2012 09:43|
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