Beach, R. A. and Piquette, E. C. and McGill, T. C. (1999) XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces. MRS Internet Journal of Nitride Semiconductor Research, 4 (S1). Art. No. G6.26. ISSN 1092-5783. http://resolver.caltech.edu/CaltechAUTHORS:BEAmrsijnsr99
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The incorporation of oxygen onto the (3x3) reconstructed surface of GaN(0001) has been studied using X-ray Photoelectron Spectroscopy (XPS). It was found that the (3x3) reconstruction corresponds to a fractional Ga adlayer atop a Ga terminated GaN surface. Our measurements indicate a surface coverage of 1.15 ± 0.2 monolayers of relaxed Ga on the surface. The binding energy separation between the relaxed surface Ga3d core level and bulk Ga3d level was measured to be 1.1 ± 0.1 eV. A metallic component extending from the bulk GaN valence band maximum out to 0 eV was also present in the XPS spectrum. The separation between the bulk valence band maximum and the Fermi level of the metallic component was found to be 2.1 ± 0.1 eV. The relaxation of the surface Ga was found to decrease with oxygen exposure indicating Ga-O bonding, with oxygen adsorption terminating at 1.3 ± 0.2 monolayers. The O1s core level was found to have a FWHM of 2.0 ± 0.1 eV.
|Additional Information:||© 1999 The Materials Research Society. This work was supported by DARPA and monitored by the ONR under Grant N00014-92-J-1845. This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4. http://nsr.mij.mrs.org/4S1/|
|Official Citation:||Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.26 (1999).|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
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|Deposited On:||12 Dec 2007|
|Last Modified:||26 Dec 2012 09:47|
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