Söderström, J. R. and Chow, D. H. and McGill, T. C. (1989) New negative differential resistance device based on resonant interband tunneling. Applied Physics Letters, 55 (11). pp. 1094-1096. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:SODapl89a
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We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band, giving rise to a peak in the current-voltage characteristic. This heterostructure design virtually eliminates many of the competing transport mechanisms which limit the performance of conventional double-barrier structures. Peak-to-valley current ratios as high as 20 and 88 are observed at room temperature and liquid-nitrogen temperature, respectively. These are the highest values reported for any tunnel structure.
|Additional Information:||© 1989 American Institute of Physics. Received 30 May 1989; accepted 6 July 1989. This work was supported by the Office of Naval Research under contract No. NO00014-89-J-1141. One of us (JRS) wishes to thank the Boncompagni-Ludovisi foundation for financial support. Another (DHC) is thankful to TRW for financial support.|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||05 Mar 2008|
|Last Modified:||26 Dec 2012 09:51|
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