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New negative differential resistance device based on resonant interband tunneling

Söderström, J. R. and Chow, D. H. and McGill, T. C. (1989) New negative differential resistance device based on resonant interband tunneling. Applied Physics Letters, 55 (11). pp. 1094-1096. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:SODapl89a

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Abstract

We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band, giving rise to a peak in the current-voltage characteristic. This heterostructure design virtually eliminates many of the competing transport mechanisms which limit the performance of conventional double-barrier structures. Peak-to-valley current ratios as high as 20 and 88 are observed at room temperature and liquid-nitrogen temperature, respectively. These are the highest values reported for any tunnel structure.


Item Type:Article
Additional Information:© 1989 American Institute of Physics. Received 30 May 1989; accepted 6 July 1989. This work was supported by the Office of Naval Research under contract No. NO00014-89-J-1141. One of us (JRS) wishes to thank the Boncompagni-Ludovisi foundation for financial support. Another (DHC) is thankful to TRW for financial support.
Record Number:CaltechAUTHORS:SODapl89a
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:SODapl89a
Alternative URL:http://dx.doi.org/10.1063/1.101715
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9701
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:05 Mar 2008
Last Modified:26 Dec 2012 09:51

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