Archer, Melissa J. and Law, Daniel C. and Mesropian, Shoghig and Haddad, Moran and Fetzer, Christopher M. and Ackerman, Arthur C. and Ladous, Corinne and King, Richard R. and Atwater, Harry A. (2008) GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates. Applied Physics Letters, 92 (10). Art. No. 103503. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:ARCapl08
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:ARCapl08
Large area, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition on Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates.
|Additional Information:||©2008 American Institute of Physics. Received 10 January 2008; accepted 4 February 2008; published 11 March 2008. The authors would like to acknowledge the National Renewable Energy Laboratory through Subcontract No. XAT-4-33624-10 for support of the Caltech and Spectrolab portions of this work. One of us (M.J.A.) acknowledges fellowship support from the National Science Foundation. Support for TEM work was provided by the Caltech Kavli Nanoscience Institute and Materials Science TEM facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR-0520565.|
|Group:||Kavli Nanoscience Institute|
|Subject Keywords:||gallium arsenide, gallium compounds, germanium, indium compounds, MOCVD, photovoltaic effects, silicon, solar cells|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||14 Mar 2008|
|Last Modified:||26 Dec 2012 09:52|
Repository Staff Only: item control page