Johnson, M. B. and McGill, T. C. and Paulter, N. G. (1989) Carrier lifetimes in ion-damaged GaAs. Applied Physics Letters, 54 (24). pp. 2424-2426. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:JOHapl89b
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Photoluminescence excitation correlation spectroscopy has been used to measure the dependence of carrier lifetime on the H+ ion implantation dose in GaAs. For doses greater than 1×10^12 cm^−2 the carrier lifetime is inversely proportional to the ion dose. The minimum lifetime measured was 0.6±0.2 ps for a dose of 1×10^14 cm^−2. Most important, there is no sign of saturation of carrier lifetime with ion dose down to this lifetime, thus still shorter lifetimes should be achievable with increased ion dose.
|Additional Information:||Copyright © 1989 American Institute of Physics. Received 5 December 1988; accepted 4 April 1989. The authors would like to acknowledge Al Gibbs of Los Alamos National Laboratories for the sample processing. One of us (M.B.J.) would like to thank Dr. A.T. Hunter of Hughes Research Laboratories for helpful discussions about this work. This work was supported in part by the Defense Advanced Research Projects Agency under contract No. N00014-84-K-0501.|
|Subject Keywords:||CARRIER LIFETIME, GALLIUM ARSENIDES, DAMAGE, PHYSICAL RADIATION EFFECTS, PHOTOLUMINESCENCE|
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|Deposited On:||17 Mar 2008|
|Last Modified:||26 Dec 2012 09:52|
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