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Direct modulation of semiconductor lasers at f>10 GHz by low-temperature operation

Lau, K. Y. and Harder, Ch. and Yariv, A. (1984) Direct modulation of semiconductor lasers at f>10 GHz by low-temperature operation. Applied Physics Letters, 44 (3). pp. 273-275. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:LAUapl84a

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Abstract

Using a 175-µm-long buried-heterostructure laser fabricated on a semi-insulating substrate operating at −50 °C, a direct amplitude modulation bandwidth in excess of 10 GHz has been achieved.


Item Type:Article
Additional Information:© 1984 American Institute of Physics. Received 19 September 1983; accepted 8 November 1983. The authors thank Dr. N. Bar-Chaim and Dr. I. Ury for fabricating the lasers used in this experiment. This research was supported by the Defense Advance Research Project Agency and by the Office of Naval Research.
Record Number:CaltechAUTHORS:LAUapl84a
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:LAUapl84a
Alternative URL:http://dx.doi.org/10.1063/1.94744
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9807
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:18 Mar 2008
Last Modified:26 Dec 2012 09:53

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