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Double active region index-guided semiconductor laser

Chen, T. R. and Kajanto, M. and Zhuang, Yuhua and Yariv, A. (1989) Double active region index-guided semiconductor laser. Applied Physics Letters, 54 (2). pp. 108-110. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:CHEapl89

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Abstract

A buried crescent InGaAsP/InP laser with a double active layer was fabricated. The laser showed very high characteristic temperature T0 and highly nonlinear light versus current characteristics. A theoretical model using a rate equation approach showed good agreement with the experimental results.


Item Type:Article
Additional Information:Copyright © 1989 American Institute of Physics. Received 10 August 1988; accepted 31 October 1988. This work was supported by Defense Advanced Research Projects Agency (J. Murphy) and the Office of Naval Research (L. Cooper).
Subject Keywords:SEMICONDUCTOR LASERS, FABRICATION, EXPERIMENTAL DATA, OPERATION, INDIUM PHOSPHIDES, GALLIUM PHOSPHIDES, GALLIUM ARSENIDES, INDIUM ARSENIDES, LAYERS, MATHEMATICAL MODELS, BURIED HETEROSTRUCTURES, BURIED LAYERS
Record Number:CaltechAUTHORS:CHEapl89
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:CHEapl89
Alternative URL:http://dx.doi.org/10.1063/1.101243
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9895
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:26 Mar 2008
Last Modified:26 Dec 2012 09:54

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