Chen, T. R. and Kajanto, M. and Zhuang, Yuhua and Yariv, A. (1989) Double active region index-guided semiconductor laser. Applied Physics Letters, 54 (2). pp. 108-110. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:CHEapl89
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Abstract
A buried crescent InGaAsP/InP laser with a double active layer was fabricated. The laser showed very high characteristic temperature T0 and highly nonlinear light versus current characteristics. A theoretical model using a rate equation approach showed good agreement with the experimental results.
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright © 1989 American Institute of Physics. Received 10 August 1988; accepted 31 October 1988. This work was supported by Defense Advanced Research Projects Agency (J. Murphy) and the Office of Naval Research (L. Cooper). |
| Subject Keywords: | SEMICONDUCTOR LASERS, FABRICATION, EXPERIMENTAL DATA, OPERATION, INDIUM PHOSPHIDES, GALLIUM PHOSPHIDES, GALLIUM ARSENIDES, INDIUM ARSENIDES, LAYERS, MATHEMATICAL MODELS, BURIED HETEROSTRUCTURES, BURIED LAYERS |
| Record Number: | CaltechAUTHORS:CHEapl89 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:CHEapl89 |
| Alternative URL: | http://dx.doi.org/10.1063/1.101243 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 9895 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 26 Mar 2008 |
| Last Modified: | 26 Dec 2012 09:54 |
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