Chen, T. R. and Kajanto, M. and Zhuang, Yuhua and Yariv, A. (1989) Double active region index-guided semiconductor laser. Applied Physics Letters, 54 (2). pp. 108-110. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:CHEapl89
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:CHEapl89
A buried crescent InGaAsP/InP laser with a double active layer was fabricated. The laser showed very high characteristic temperature T0 and highly nonlinear light versus current characteristics. A theoretical model using a rate equation approach showed good agreement with the experimental results.
|Additional Information:||Copyright © 1989 American Institute of Physics. Received 10 August 1988; accepted 31 October 1988. This work was supported by Defense Advanced Research Projects Agency (J. Murphy) and the Office of Naval Research (L. Cooper).|
|Subject Keywords:||SEMICONDUCTOR LASERS, FABRICATION, EXPERIMENTAL DATA, OPERATION, INDIUM PHOSPHIDES, GALLIUM PHOSPHIDES, GALLIUM ARSENIDES, INDIUM ARSENIDES, LAYERS, MATHEMATICAL MODELS, BURIED HETEROSTRUCTURES, BURIED LAYERS|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||26 Mar 2008|
|Last Modified:||26 Dec 2012 09:54|
Repository Staff Only: item control page