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Embedded epitaxial growth of low-threshold GaInAsP/InP injection lasers

Chen, P. C. and Yu, K. L. and Margalit, S. and Yariv, A. (1981) Embedded epitaxial growth of low-threshold GaInAsP/InP injection lasers. Applied Physics Letters, 38 (5). pp. 301-303. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:CHEapl81

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Abstract

Single-growth liquid-phase embedded epitaxy in the GaInAsP/InP system is described, and a new heterostructure laser is grown using this technique. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 45 mA are achieved for a laser with 4-mm-wide active region.


Item Type:Article
Additional Information:Copyright © 1981 American Institute of Physics. Received 13 October 1980; accepted for publication 18 December 1980. The authors wish to thank P. Koen of Caltech for taking the scanning electron microscope (SEM) pictures. This work is supported by the Office of Naval Research and the National Science Foundation.
Subject Keywords:SEMICONDUCTOR LASERS, CRYSTAL GROWTH, THRESHOLD, EPITAXY, INDIUM PHOSPHIDES, GALLIUM ARSENIDES, LIQUIDS, ELECTRIC CURRENTS, OPTICAL PROPERTIES, CONFINEMENT
Record Number:CaltechAUTHORS:CHEapl81
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:CHEapl81
Alternative URL:http://dx.doi.org/10.1063/1.92366
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9897
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:26 Mar 2008
Last Modified:26 Dec 2012 09:54

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