Chen, T. R. and Margalit, S. and Koren, U. and Yu, K. L. and Chiu, L. C. and Hasson, A. and Yariv, A. (1983) Direct measurement of the carrier leakage in an InGaAsP/InP laser. Applied Physics Letters, 42 (12). pp. 1000-1002. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:CHEapl83a
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Abstract
Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipolar-transistor structure. Experimental results indicate a significant amount of carrier leakage under normal laser operating conditions.
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright © 1983 American Institute of Physics. Received 6 December 1982; accepted 15 February 1983. This work was supported by Office of Naval Research and the National Science Foundation. |
| Subject Keywords: | indium arsenides, gallium arsenides, indium phosphides, gallium phosphides, charge carriers, experimental data, semiconductor lasers, heterojunctions, potentials |
| Record Number: | CaltechAUTHORS:CHEapl83a |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:CHEapl83a |
| Alternative URL: | http://dx.doi.org/10.1063/1.93841 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 9902 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 26 Mar 2008 |
| Last Modified: | 26 Dec 2012 09:54 |
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