Chen, T. R. and Eng, L. and Zhao, B. and Zhuang, Y. H. and Sanders, S. and Morkoç, H. and Yariv, A. (1990) Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser. IEEE Journal of Quantum Electronics, 26 (7). pp. 1183-1190. ISSN 0018-9197 http://resolver.caltech.edu/CaltechAUTHORS:CHEieeejqe90
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Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hybrid beam epitaxy and liquid-phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser (L=425 μm) and 0.75 mA for a coated laser (R~0.9, L=198 μm), were obtained. A 3-dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA). Procedures for material preparation and device fabrication are introduced.
|Additional Information:||© Copyright 1990 IEEE. Reprinted with permission. Manuscript received October 27, 1989; revised February 21, 1990. This work was supported by the Defense Advanced Research Projects Agency and the Office of Naval Research. The work of S. Sanders was supported by a National Science Foundation Graduate Fellowship. T.R. Chen would like to thank J. Paslaski for helpful discussions on high-frequency modulation. The authors are also grateful to D. Armstrong for his help in many ways during the LPE growth process.|
|Subject Keywords:||III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; optical workshop techniques; semiconductor growth; semiconductor junction lasers|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||27 Mar 2008|
|Last Modified:||26 Dec 2012 09:54|
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