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Piquette, E. C. and Bridger, P. M. and Bandić, Z. Z. et al. (1999) Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire. Journal of Vacuum Science and Technology B, 17 (3). pp. 1241-1245. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:20120110-101005142

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