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Pretorius, R. and Liau, Z. L. and Lau, S. S. et al. (1977) Growth mechanism for solid-phase epitaxy of Si in the Si <100>/Pd2Si/Si(amorphous) system studied by a radioactive tracer technique. Journal of Applied Physics, 48 (7). pp. 2886-2890. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:PREjap77