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I

Im, S. et al. (1997) SiGeC alloy layer formation by high-dose C + implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100). Journal of Applied Physics, 81 (4). pp. 1700-1703. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:IMSjap97

L

Lie, D. Y. C. et al. (1993) Damage and strain in epitaxial GexSi1–x films irradiated with Si. Journal of Applied Physics, 74 (10). pp. 6039-6045. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:LIEjap93

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