Items where Person is "Liau-Z-L"

L

Liau, Z. L. and Tsaur, B. Y. and Mayer, J. W. (1979) Influence of atomic mixing and preferential sputtering on depth profiles and interfaces. Journal of Vacuum Science and Technology, 16 (2). pp. 121-127. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:20120726-092329135

Liau, Z. L. and Mayer, J. W. (1978) Limits of composition achievable by ion implantation. Journal of Vacuum Science and Technology, 15 (5). pp. 1629-1635. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:20120802-072906574

Lau, S. S. et al. (1977) Heterostructure by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system. Journal of Applied Physics, 48 (3). pp. 917-919. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120808-085747179

Lau, S. S. et al. (1976) Antimony doping of Si layers grown by solid-phase epitaxy. Applied Physics Letters, 28 (3). pp. 148-150. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:LAUapl76

P

Pretorius, R. et al. (1977) Growth mechanism for solid-phase epitaxy of Si in the Si <100>/Pd2Si/Si(amorphous) system studied by a radioactive tracer technique. Journal of Applied Physics, 48 (7). pp. 2886-2890. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:PREjap77

Pretorius, R. et al. (1976) Dissociation mechanism for solid-phase epitaxy of silicon in the Si <100>/Pd2Si/Si (amorphous) system. Applied Physics Letters, 29 (9). pp. 598-600. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:PREapl76

T

Tsaur, B. Y. et al. (1979) Depth dependence of atomic mixing by ion beams. Applied Physics Letters, 35 (10). pp. 825-828. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:TSAapl79