Items where Person is "Nicolet-M-A"

Romano, V. et al. (2011) Irradiation of amorphous Ta_(42)Si_(13)N_(45) film with a femtosecond laser pulse. Applied Physics A: Materials Science and Processing, 104 (1). pp. 357-364. ISSN 0947-8396 http://resolver.caltech.edu/CaltechAUTHORS:20110706-112823253

Eisen, F. H. and Nicolet, M.-A. (2003) Preferred Position of the Detector for MeV Backscattering Spectrometry. In: Application of accelerators in research and industry. AIP Conference Proceedings (680). American Institute of Physics , Melville, NY, pp. 411-413. ISBN 0-7354-0149-7 http://resolver.caltech.edu/CaltechAUTHORS:20111011-081811288

Gasser, S. M. and Kolawa, E. and Nicolet, M.-A. (1999) Thermal reaction of Pt film with 110 GaN epilayer. Journal of Vacuum Science and Technology A, 17 (5). pp. 2642-2646. ISSN 0734-2101 http://resolver.caltech.edu/CaltechAUTHORS:GASjvsta99

Gasser, S. M. et al. (1999) Instability of Amorphous Ru-Si-O Thin Films under Thermal Oxidation. Journal of the Electrochemical Society, 146 (4). pp. 1546-1548. ISSN 0013-4651 http://resolver.caltech.edu/CaltechAUTHORS:GASjes99

Kacsich, T. et al. (1998) Films of Ni–7 at% V, Pd, Pt and Ta–Si–N as diffusion barriers for copper on Bi2Te3. Journal of Physics D: Applied Physics, 31 (19). pp. 2406-2411. ISSN 0022-3727 http://resolver.caltech.edu/CaltechAUTHORS:KACjpd98

Grétillat, M.-A. et al. (1998) Surface-micromachined Ta–Si–N beams for use in micromechanics. Journal of Micromechanics and Microengineering, 8 (2). pp. 88-90. ISSN 0960-1317 http://resolver.caltech.edu/CaltechAUTHORS:GREjmm98

Grétillat, M.-A. et al. (1998) Surface-micromachined Ta-Si-N beams for use in micromechanics. Journal of Micromechanics and Microengineering, 8 (2). pp. 88-90. ISSN 0960-1317 http://resolver.caltech.edu/CaltechAUTHORS:20111222-090724822

Im, S. et al. (1997) SiGeC alloy layer formation by high-dose C + implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100). Journal of Applied Physics, 81 (4). pp. 1700-1703. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:IMSjap97

Sun, X. et al. (1996) Oxidation and crystallization of an amorphous Zr60Al15Ni25 alloy. Journal of Materials Research, 11 (11). pp. 2738-2743. ISSN 0884-2914 http://resolver.caltech.edu/CaltechAUTHORS:SUNjmr96

Reid, J. S. et al. (1996) Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations. Journal of Applied Physics, 79 (2). pp. 1109-1117. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:REIjap96

Dauksher, W. J. et al. (1995) Method for fabricating a low stress x-ray mask using annealable amorphous refractory compounds. Journal of Vacuum Science and Technology B, 13 (6). pp. 3103-3108. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:20120216-095821404

McLane, G. F. et al. (1994) Reactive ion etching of Ta–Si–N diffusion barriers in CF_(4)+O_(2). Journal of Vacuum Science and Technology B, 12 (4). pp. 2352-2355. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:20120306-151931971

Lie, D. Y. C. et al. (1993) Damage and strain in epitaxial GexSi1–x films irradiated with Si. Journal of Applied Physics, 74 (10). pp. 6039-6045. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:LIEjap93

Liu, W. S. et al. (1992) Instability of a GexSi1−xO2 film on a GexSi1−x layer. Journal of Applied Physics, 72 (9). pp. 4444-4446. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:LIUjap92c

Workman, T. W. and Nicolet, M-A. (1992) D(d,p)T fusion induced by heavy-ion irradiation of TiD1.7. Physical Review B, 46 (13). pp. 8589-8592. ISSN 0163-1829 http://resolver.caltech.edu/CaltechAUTHORS:WORprb92

Bai, G. and Nicolet, M.-A. (1992) Generation and recovery of strain in (28)Si-implanted pseudomorphic GeSi films on Si(100). Journal of Applied Physics, 71 (9). pp. 4227-4229. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:BAIjap92b

Liu, W. S. et al. (1992) Wet oxidation of GeSi at (700)C. Journal of Applied Physics, 71 (8). pp. 4015-4018. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:LIUjap92b

Liu, W. S. et al. (1992) Importance of sample preheating in oxidation of GexSi1−x. Journal of Applied Physics, 71 (7). pp. 3626-3627. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:LIUjap92a

Bai, G. and Nicolet, M.-A. (1992) Damage production and annealing in 28Si-implanted CoSi2/Sim(111) heterostructures. Journal of Applied Physics1, 71 (2). pp. 670-675. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:BAIjap92a

Bai, G. and Nicolet, M.-A. (1991) Defect production in Si(100) by 19F, 28Si, 40Ar, and 131Xe implantation at room temperature. Journal of Applied Physics, 70 (7). pp. 3551-3555. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:BAIjap91c

Chen, J. S. et al. (1991) Epitaxial growth of GaAs by solid-phase transport. Applied Physics Letters, 59 (13). pp. 1597-1599. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:CHEapl91

Pokela, P. J. et al. (1991) Thermal oxidation of amorphous ternary Ta36Si14N50 thin films. Journal of Applied Physics, 70 (5). pp. 2828-2832. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:POKjap91

Kolawa, E. et al. (1991) Tantalum-based diffusion barriers in Si/Cu VLSI metallizations. Journal of Applied Physics, 70 (3). pp. 1369-1373. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:KOLjap91

Bai, G. and Nicolet, M.-A. (1991) Defects production and annealing in self-implanted Si. Journal of Applied Physics, 70 (2). pp. 649-655. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:BAIjap91b

Bai, G. and Nicolet, M.-A. and Vreeland, T., Jr. (1991) Elastic and thermal properties of mesotaxial CoSi2 layers on Si. Journal of Applied Physics, 69 (9). pp. 6451-6455. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:BAIjap91a

Tsai, C. J. et al. (1991) Self-consistent determination of the perpendicular strain profile of implanted Si by analysis of x-ray rocking curves. Journal of Applied Physics, 69 (4). pp. 2076-2079. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:TSAjap91

Mahan, John E. et al. (1991) Reflection high-energy electron diffraction patterns of CrSi_2 films on (111) silicon. Journal of Vacuum Science and Technology B, 9 (1). pp. 64-68. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:20120509-133504606

Vu, Quat T. et al. (1990) Thermal oxidation of reactively sputtered amorphous W_(80)N_(20) films. Journal of Applied Physics, 68 (12). pp. 6420-6423. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120509-153900631

Bai, G. et al. (1990) Radiation damage in ReSi2 by a MeV 4He beam. Applied Physics Letters, 57 (16). pp. 1657-1659. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BAIapl90

Bai, G. et al. (1990) Channeling of MeV ions in polyatomic epitaxial films: ReSi2 on Si(100). Physical Review B, 41 (13). pp. 8603-8607. ISSN 0163-1829 http://resolver.caltech.edu/CaltechAUTHORS:BAIprb90

Kolawa, E. et al. (1990) Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations. Journal of Vacuum Science and Technology A, 8 (3). pp. 3006-3010. ISSN 0734-2101 http://resolver.caltech.edu/CaltechAUTHORS:20120508-142551386

Bai, Gang et al. (1989) Strain in epitaxial CoSi2 films on Si (111) and inference for pseudomorphic growth. Applied Physics Letters, 55 (18). pp. 1874-1876. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BAIapl89

Ma, E. and Nicolet, M-A. and Nathan, M. (1989) NiAl3 formation in Al/Ni thin-film bilayers with and without contamination. Journal of Applied Physics, 65 (7). pp. 2703-2710. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:MAEjap89

Thuillard, M. et al. (1989) Thermal reaction of Al/Ti bilayers with contaminated interface. Journal of Applied Physics, 65 (6). pp. 2553-2556. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120530-151638572

Ma, E. et al. (1989) Ion mixing of metal/Al bilayers near 77 K. Applied Physics Letters, 54 (5). pp. 413-415. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:MAEapl89

Tandon, J. L. et al. (1989) Sequential nature of damage annealing and activation in implanted GaAs. Applied Physics Letters, 54 (5). pp. 448-450. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:TANapl89

Kolawa, E. et al. (1988) Indium oxide diffusion barriers for Al/Si metallizations. Applied Physics Letters, 53 (26). pp. 2644-2646. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:KOLapl88

Ma, W. et al. (1988) Simultaneous planar growth of amorphous and crystalline Ni silicides. Applied Physics Letters, 53 (21). pp. 2033-2035. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:MAEapl88

So, F. C. T. et al. (1988) WxN1–x alloys as diffusion barriers between Al and Si. Journal of Applied Physics, 64 (5). pp. 2787-2789. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:SOFjap88

Zhao, X.-A. and So, F. C. T. and Nicolet, M-A. (1988) TiAl3 formation by furnace annealing of Ti/Al bilayers and the effect of impurities. Journal of Applied Physics, 63 (8). pp. 2600-2607. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:ZHAjap88

Ma, E. et al. (1988) Ion mixing and thermochemical properties of tracers in Ag. Journal of Applied Physics, 63 (7). pp. 2449-2451. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:MAEjap88

Kim, S.-J. et al. (1988) Low-temperature ion-beam mixing in metals. Physical Review B, 37 (1). pp. 38-49. ISSN 0163-1829 http://resolver.caltech.edu/CaltechAUTHORS:KIMprb88

Lim, B. S. et al. (1988) Silicon resistor to measure temperature during rapid thermal annealing. Review of Scientific Instruments, 59 (1). pp. 182-183. ISSN 0034-6748 http://resolver.caltech.edu/CaltechAUTHORS:LIMrsi88

So, F. C. T. et al. (1987) Summary Abstract: Reactively sputtered RuO2 and Mo–O diffusion barriers. Journal of Vacuum Science and Technology B, 5 (6). pp. 1748-1749. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:SOFjvstb87

Zhao, X.-A. and Yang, H.-Y. and Nicolet, M-A. (1987) Kinetics of NiAl3 growth induced by steady-state thermal annealing at the Ni-<Al> interface. Journal of Applied Physics, 62 (5). pp. 1821-1825. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:ZHAjap87

Lim, B. S. et al. (1987) Kinetics and moving species during Co2Si formation by rapid thermal annealing. Journal of Applied Physics, 61 (11). pp. 5027-5030. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:LIMjap87

Workman, T. W. et al. (1987) Effect of thermodynamics on ion mixing. Applied Physics Letters, 50 (21). pp. 1485-1487. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:WORapl87

Cheng, Y.-T. and Nicolet, M.-A. and Johnson, W. L. (1987) From cascade to spike — a fractal-geometry approach. Physical Review Letters, 58 (20). pp. 2083-2086. ISSN 0031-9007 http://resolver.caltech.edu/CaltechAUTHORS:CHEprl87

Kao, Y. C. et al. (1987) Study of CoSi2/Si strained layers grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B, 5 (3). pp. 745-748. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:KAOjvstb87

Kolawa, E. et al. (1987) Reactively sputtered RuO2 diffusion barriers. Applied Physics Letters, 50 (13). pp. 854-855. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:KOLapl87

Banwell, T. et al. (1987) Chemical effects in ion mixing of a ternary system (metal-SiO_2). Applied Physics Letters, 50 (10). pp. 571-573. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:20120622-075340401

Zhao, X.-A. and Kolawa, E. and Nicolet, M-A. (1986) Reaction of thin metal films with crystalline and amorphous Al2O3. Journal of Vacuum Science and Technology A, 4 (6). pp. 3139-3141. ISSN 0734-2101 http://resolver.caltech.edu/CaltechAUTHORS:ZHAjvsta86

So, F. C. T. et al. (1986) Thermal stability and nitrogen redistribution in the <Si>/Ti/W-N/ AI metallization scheme. Journal of Vacuum Science and Technology A, 4 (6). pp. 3078-3081. ISSN 0734-2101 http://resolver.caltech.edu/CaltechAUTHORS:20120627-125934625

So, F. C. T. et al. (1986) Thermal stability and nitrogen redistribution in the〈Si〉/Ti/W–N/Al metallization scheme. Journal of Vacuum Science and Technology A, 4 (6). pp. 3078-3081. ISSN 0734-2101 http://resolver.caltech.edu/CaltechAUTHORS:20120626-155811980

Cheng, Y.-T. et al. (1986) Correlation between the cohesive energy and the onset of radiation-enhanced diffusion in ion mixing. Journal of Applied Physics, 60 (7). pp. 2615-2617. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:CHEjap86

Kattelus, H. P. et al. (1986) Bias-induced stress transitions in sputtered TiN films. Journal of Vacuum Science and Technology A, 4 (4). pp. 1850-1854. ISSN 0734-2101 http://resolver.caltech.edu/CaltechAUTHORS:KATjvsta86

Banwell, Thomas et al. (1986) Effect of dose rate on ion beam mixing in Nb-Si. Applied Physics Letters, 48 (22). pp. 1519-1521. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:20120626-145123709

Banwell, T. C. and Zhao, X.-A. and Nicolet, M.-A. (1986) Effects of ion irradiation on conductivity of CrSi_2 thin films. Journal of Applied Physics, 59 (9). pp. 3077-3080. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120626-152109958

So, F. C. T. and Lien, C.-D. and Nicolet, M. -A. (1985) Formation and electrical properties of Hf Si_2 grown thermally from evaporated Hf and Si films. Journal of Vacuum Science and Technology A, 3 (6). pp. 2284-2288. ISSN 0734-2101 http://resolver.caltech.edu/CaltechAUTHORS:20120628-154831998

Kattelus, H. P. et al. (1985) Sputtered W–N diffusion barriers. Journal of Vacuum Science and Technology A, 3 (6). pp. 2246-2254. ISSN 0734-2101 http://resolver.caltech.edu/CaltechAUTHORS:KATjvsta85

Cheng, Y.-T. and Johnson, W. L. and Nicolet, M-A. (1985) Dominant moving species in the formation of amorphous NiZr by solid-state reaction. Applied Physics Letters, 47 (6). pp. 800-802. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:CHEapl85a

Affolter, K. and Zhao, X.-A. and Nicolet, M.-A. (1985) Transition-metal silicides formed by ion mixing and by thermal annealing: Which species moves? Journal of Applied Physics, 58 (8). pp. 3087-3083. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:AFFjap85

Van Rossum, M. et al. (1985) Correlation between cohesive energy and mixing rate in ion mixing of metallic bilayers. Applied Physics Letters, 46 (6). pp. 610-612. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:ROSapl85

Hamdi, A. H. et al. (1985) Analyses of metalorganic chemical-vapor-deposition-grown AlxGa1−xAs/GaAs strained superlattice structures by backscattering spectrometry and x-ray rocking curves. Journal of Applied Physics, 57 (4). pp. 1400-1402. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:HAMjap85

Hamdi, A. H. et al. (1985) Combined use of ion backscattering and x-ray rocking curves in the analyses of superlattices. Physical Review B, 31 (4). pp. 2343-2347. ISSN 0163-1829 http://resolver.caltech.edu/CaltechAUTHORS:HAMprb85

Speriosu, V. S. et al. (1985) Interfacial strain in AlxGa1–xAs layers on GaAs. Journal of Applied Physics, 57 (4). pp. 1377-1379. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:SPEjap85

Pan, C. K. et al. (1985) Structural study of GaSb/AlSb strained-layer superlattice. Physical Review B, 31 (3). pp. 1270-1277. ISSN 0163-1829 http://resolver.caltech.edu/CaltechAUTHORS:PANprb85

Kim, Sung-Joon et al. (1985) Low-temperature ion beam mixing of Pt and Si markers in Ge. Applied Physics Letters, 46 (2). pp. 154-156. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:KIMapl85

Ho, K. T. and Lien, C. D. and Nicolet, M-A. (1985) Palladium silicide formation under the influence of nitrogen and oxygen impurities. Journal of Applied Physics, 57 (2). pp. 232-236. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:HOKjap85a

Zur, A. and McGill, T. C. and Nicolet, M.-A. (1985) Transition-metal silicides lattice-matched to silicon. Journal of Applied Physics, 57 (2). pp. 600-603. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:ZURjap85

Ho, K. T. et al. (1985) An inert marker study for palladium silicide formation: Si moves in polycrystalline Pd2Si. Journal of Applied Physics, 57 (2). pp. 227-231. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:HOKjap85b

Lien, C.-D. and Nicolet, M.-A. and Pai, C. S. (1985) A structure marker study for Pd_2Si formation: Pd moves in epitaxial Pd_2Si. Journal of Applied Physics, 57 (2). pp. 224-226. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120628-081537763

Zhu, M. F. et al. (1984) Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon. Journal of Applied Physics, 56 (10). pp. 2740-2745. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:ZHUjap84

Lien, C. D. and Nicolet, M-A. (1984) Impurity effects in transition metal silicides. Journal of Vacuum Science and Technology B, 2 (4). pp. 738-747. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:LIEjvstb84

Van Rossum, M. and Nicolet, M-A. and Wilts, C. H. (1984) Magnetic properties of amorphous thin films produced by ion mixing. Journal of Applied Physics, 56 (4). pp. 1032-1035. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:ROSjap84

Ho, K. T. and Suni, I. and Nicolet, M-A. (1984) Substrate orientation dependence of enhanced epitaxial regrowth of silicon. Journal of Applied Physics, 56 (4). pp. 1207-1212. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:HOKjap84

Speriosu, V. S. et al. (1984) Depth profiles of perpendicular and parallel strain in a GaAsxP1−x/GaP superlattice. Applied Physics Letters, 45 (3). pp. 223-225. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:SPEapl84

Suni, I. et al. (1984) Influence of F and Cl on the recrystallization of ion-implanted amorphous Si. Journal of Applied Physics, 56 (2). pp. 273-278. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:SUNjap84

Cheng, Y-T. et al. (1984) Influence of chemical driving forces in ion mixing of metallic bilayers. Applied Physics Letters, 45 (2). pp. 185-187. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:CHEapl84

Lien, C.-D. and Nicolet, M-A. (1984) Mathematical model for a radioactive marker in silicide formation. Journal of Applied Physics, 55 (12). pp. 4187-4193. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120702-094830929

Van Rossum, M. and Nicolet, M-A. and Johnson, W. L. (1984) Amorphization of Hf-Ni films by solid-state reaction. Physical Review B, 29 (10). pp. 5498-5504. ISSN 0163-1829 http://resolver.caltech.edu/CaltechAUTHORS:ROSprb84

Shreter, U. and So, Frank C. T. and Nicolet, M-A. (1984) Chromium silicide formation by ion mixing. Journal of Applied Physics, 55 (10). pp. 3500-3504. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120702-115714409

Kung, K. T-Y. and Suni, I. and Nicolet, M-A. (1984) Electrical characteristics of amorphous molybdenum-nickel contacts to silicon. Journal of Applied Physics, 55 (10). pp. 3882-3885. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:KUNjap84

Bartur, M. and Nicolet, M-A. (1984) Self-confined metallic interconnects for very large scale integration. Applied Physics Letters, 44 (2). pp. 263-264. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BARapl84a

Barcz, A. J. and Paine, B. M. and Nicolet, M-A. (1984) Ion mixing of markers in SiO2 and Si. Applied Physics Letters, 44 (1). pp. 45-47. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BARapl84c

Prabhakar, A. and McGill, T. C. and Nicolet, M.-A. (1983) Platinum diffusion into silicon from PtSi. Applied Physics Letters, 43 (12). pp. 1118-1120. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:PRAapl83

Hung, L. S. et al. (1983) Kinetics of TiSi2 formation by thin Ti films on Si. Journal of Applied Physics, 54 (9). pp. 5076-5080. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:HUNjap83

Bartur, M. and Nicolet, M-A. (1983) Marker experiments for diffusion in the silicide during oxidation of PdSi, Pd2Si, CoSi2, and NiSi2 films on <Si>. Journal of Applied Physics, 54 (9). pp. 5404-5415. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:BARjap83

Shreter, U. and Fernandez, R. and Nicolet, M-A. (1983) Temperature-dependent ion mixing and diffusion during sputtering of thin films of CrSi_2 on silicon. Applied Physics Letters, 43 (3). pp. 247-249. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:20120717-090516601

Finetti, M. et al. (1983) Electrical characteristics of amorphous iron-tungsten contacts on silicon. Applied Physics Letters, 42 (11). pp. 987-989. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:FINapl83

Liu, B. X. et al. (1983) Ion mixing to produce amorphous Mo-Ru superconducting films. Applied Physics Letters, 42 (7). pp. 624-626. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:LIUapl83b

Liu, Bai-Xin et al. (1983) Structural difference rule for amorphous alloy formation by ion mixing. Applied Physics Letters, 42 (1). pp. 45-47. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:LIUapl83a

Matteson, S. and Nicolet, M-A. (1983) Ion Mixing. Annual Review of Materials Science, 13 . pp. 339-362. ISSN 0084-6600 http://resolver.caltech.edu/CaltechAUTHORS:20120713-112400215

Speriosu, V. S. et al. (1982) X-ray rocking curve study of Si-implanted GaAs, Si, and Ge. Applied Physics Letters, 40 (7). pp. 604-606. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:SPEapl82

Suni, I. et al. (1982) Compensating impurity effect on epitaxial regrowth rate of amorphized Si. Applied Physics Letters, 40 (3). pp. 269-271. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:SUNapl82

Mäenpää, M. et al. (1982) The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers. Journal of Applied Physics, 53 (2). pp. 1076-1083. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:MAEjap82

Wieluński, L. S. et al. (1982) Improvement of thermally formed nickel silicide by ion irradiation. Journal of Vacuum Science and Technology, 20 (2). pp. 182-185. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:20120716-160347437

Bartur, M. and Nicolet, M-A. (1982) Thermal oxidation of nickel disilicide. Applied Physics Letters, 40 (2). pp. 175-177. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BARapl82a

Bartur, M. and Nicolet, M-A. (1981) Electrical characteristics of Al contact to NiSi using thin W layer as a barrier. Applied Physics Letters, 39 (10). pp. 822-824. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BARapl81

Nicolet, M-A. and Bartur, M. (1981) Diffusion barriers in layered contact structures. Journal of Vacuum Science and Technology, 19 (3). pp. 786-793. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:NICjvst81

Grunthaner, P. J. et al. (1981) Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the Ni/Si system. Journal of Vacuum Science and Technology, 19 (3). pp. 641-648. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:GRUjvst81

Grimaldi, M. G. et al. (1981) Epitaxial regrowth of thin amorphous GaAs layers. Applied Physics Letters, 39 (1). pp. 70-72. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:GRIapl81

Grimaldi, M. G. et al. (1981) Ion implantation and low-temperature epitaxial regrowth of GaAs. Journal of Applied Physics, 52 (6). pp. 4038-4046. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120717-155107148

Tsaur, B. Y. et al. (1981) Sequence of phase formation in planar metal-Si reaction couples. Applied Physics Letters, 38 (11). pp. 922-924. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:TSAapl81

Cheung, N. W. et al. (1981) Thermal stability of titanium nitride for shallow junction solar cell contacts. Journal of Applied Physics, 52 (6). pp. 4297-4299. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:CHEjap81

Grimaldi, M. G. et al. (1981) Epitaxial growth of amorphous Ge films deposited on single-crystal Ge. Journal of Applied Physics, 52 (3). pp. 1351-1355. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:GRIjap81

Wieluński, L. et al. (1981) Alteration of Ni silicide formation by N implantation. Applied Physics Letters, 38 (2). pp. 106-108. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:20120719-133310810

Tsaur, B. Y. and Nicolet, M-A. (1980) Reversible phase transformation in the Pd2Si-PdSi thin-film system. Applied Physics Letters, 37 (8). pp. 708-711. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:TSAapl80

Masuyama, A. et al. (1980) Steady-state thermally annealed GaAs with room-temperature-implanted Si. Applied Physics Letters, 36 (9). pp. 749-751. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:MASapl80

Campisano, S. U. et al. (1980) Laser pulse annealing of ion-implanted GaAs. Journal of Applied Physics, 51 (1). pp. 295-298. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:CAMjap80

Tandon, J. L. et al. (1979) Pulsed electron beam induced recrystallization and damage in GaAs. Applied Physics Letters, 35 (11). pp. 867-870. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:TANapl79c

Tsaur, B. Y. et al. (1979) Depth dependence of atomic mixing by ion beams. Applied Physics Letters, 35 (10). pp. 825-828. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:TSAapl79

Lau, S. S. et al. (1979) Solar furnace annealing of amorphous Si layers. Applied Physics Letters, 35 (4). pp. 327-329. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:LAUapl79

Roulet, M. E. et al. (1979) Laser annealing of silicon on sapphire. Journal of Applied Physics, 50 (8). pp. 5536-5538. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:ROUjap79

Tandon, J. L. et al. (1979) Pulsed-laser annealing of implanted layers in GaAs. Applied Physics Letters, 34 (9). pp. 597-599. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:TANapl79b

Matteson, S. and Tonn, D. G. and Nicolet, M-A. (1979) Diagnostic test for ion implantation dosimetry. Journal of Vacuum Science and Technology, 16 (3). pp. 882-883. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:20120726-110219420

Tandon, J. L. and Nicolet, M-A. and Eisen, F. H. (1979) Silicon implantation in GaAs. Applied Physics Letters, 34 (2). pp. 165-167. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:TANapl79a

von Allmen, M. et al. (1979) Influence of the absorption coefficient in Nd laser annealing of amorphized semiconductor layers. Applied Physics Letters, 34 (1). pp. 82-84. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:20120727-101306063

Finstad, T. G. and Nicolet, M-A. (1979) Silicide formation with bilayers of Pd-Pt, Pd-Ni, and Pt-Ni. Journal of Applied Physics, 50 (1). pp. 303-307. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:FINjap79

Lau, S. S. et al. (1978) Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation. Applied Physics Letters, 33 (3). pp. 235-237. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:LAUapl78b

Lau, S. S. et al. (1978) Epitaxial growth of deposited amorphous layer by laser annealing. Applied Physics Letters, 33 (2). pp. 130-131. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:LAUapl78a

Mayer, James W. et al. (1977) Use of ion beams in space. Journal of Vacuum Science and Technology, 14 (6). p. 1281. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:20120803-103105025

Pretorius, R. et al. (1977) Growth mechanism for solid-phase epitaxy of Si in the Si <100>/Pd2Si/Si(amorphous) system studied by a radioactive tracer technique. Journal of Applied Physics, 48 (7). pp. 2886-2890. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:PREjap77

Harris, J. M. et al. (1977) Solid-phase crystallization of Si films in contact with Al layers. Journal of Applied Physics, 48 (7). pp. 2897-2904. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:HARjap77

Wittmer, W. and Finstad, T. and Nicolet, M-A. (1977) Investigation of the Au-Ge-Ni and Au-Ge-Pt system used for alloyed contacts to GaAs. Journal of Vacuum Science and Technology, 14 (4). pp. 935-936. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:20120802-111429967

Pretorius, R. et al. (1977) Radioactive silicon as a marker in thin-film silicide formation. Applied Physics Letters, 30 (10). pp. 501-503. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:PREapl77

Lau, S. S. et al. (1977) Heterostructure by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system. Journal of Applied Physics, 48 (3). pp. 917-919. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120808-085747179

Olowolafe, J. O. and Nicolet, M.-A. and Mayer, J. W. (1976) Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer. Journal of Applied Physics, 47 (12). pp. 5182-5186. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:OLOjap76

Pretorius, R. et al. (1976) Dissociation mechanism for solid-phase epitaxy of silicon in the Si <100>/Pd2Si/Si (amorphous) system. Applied Physics Letters, 29 (9). pp. 598-600. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:PREapl76

Nakamura, K. et al. (1976) Interaction of metal layers with polycrystalline Si. Journal of Applied Physics, 47 (4). pp. 1278-1283. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:NAKjap76

Nakamura, K. et al. (1976) Ti and V layers retard interaction between Al films and polycrystalline Si. Applied Physics Letters, 28 (5). pp. 277-280. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:NAKapl76

Lau, S. S. et al. (1976) Antimony doping of Si layers grown by solid-phase epitaxy. Applied Physics Letters, 28 (3). pp. 148-150. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:LAUapl76

Nakamura, K. et al. (1975) Interaction of Al layers with polycrystalline Si. Journal of Applied Physics, 46 (11). pp. 4678-4684. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:NAKjap75

Feng, J. S.-Y. and Pashley, R. D. and Nicolet, M.-A. (1975) Magnetoelectric properties of magnetite thin films. Journal of Physics C: Solid State Physics, 8 (7). pp. 1010-1022. ISSN 0022-3719 http://resolver.caltech.edu/CaltechAUTHORS:FENjpcss75

Malm, H. L. et al. (1975) Gamma–ray spectroscopy with single–carrier collection in high–resistivity semiconductors. Applied Physics Letters, 26 (6). pp. 344-346. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:MALapl75

Harris, J. M. and Nicolet, M-A. (1975) Energy straggling of 4He ions below 2.0 MeV in Al, Ni, and Au. Physical Review B, 11 (3). pp. 1013-1019. ISSN 0163-1829 http://resolver.caltech.edu/CaltechAUTHORS:HARprb75

Mayer, J. W. and Nicolet, M-A. and Chu, W. K. (1975) Backscattering spectrometry. Journal of Vacuum Science and Technology, 12 (1). p. 356. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:20120803-104952611

Harris, J. M. and Nicolet, M-A. (1975) Energy straggling of 4He ions below 2.0 MeV in Al, Ni, Pt, and Au. Journal of Vacuum Science and Technology, 12 (1). pp. 439-443. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:HARjvst75b

Harris, J. M. et al. (1975) Studies on the Al2O3–Ti–Mo–Au metallization system. Journal of Vacuum Science and Technology, 12 (1). pp. 524-527. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:HARjvst75a

Feng, J. S.-Y. and Chu, W. K. and Nicolet, M-A. (1974) Stopping-cross-section additivity for 1-2-MeV 4He+ in solid oxides. Physical Review B, 10 (9). pp. 3781-3789. ISSN 0556-2805 http://resolver.caltech.edu/CaltechAUTHORS:FENprb74

Chu, W. K. et al. (1974) Identification of the dominant diffusing species in silicide formation. Applied Physics Letters, 25 (8). pp. 454-457. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:CHUapl74

Kräutle, H. and Nicolet, M-A. and Mayer, J. W. (1974) Kinetics of silicide formation by thin films of V on Si and SiO_2 substrates. Journal of Applied Physics, 45 (8). pp. 3304-3308. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120809-110703213

Ottaviani, G. et al. (1972) Formation of Injecting and Blocking Contacts on High-Resistivity Germanium. Applied Physics Letters, 20 (8). pp. 323-325. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:OTTapl72

Bajorek, C. H. and Nicolet, M.-A. and Wilts, C. H. (1971) Preferential Oxidation of Fe in Permalloy Films. Applied Physics Letters, 19 (4). pp. 82-84. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BAJapl71

Hiraki, A. and Nicolet, M-A. and Mayer, J. W. (1971) Low-temperature migration of silicon in thin layers of gold platinum. Applied Physics Letters, 18 (5). pp. 178-181. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:HIRapl71

Bilger, H. R. and Nicolet, M.-A. (1970) A Flexible Simple Thermostat for Small Objects and the Range of 100 to 400 K. Review of Scientific Instruments, 41 (3). pp. 346-347. ISSN 0034-6748 http://resolver.caltech.edu/CaltechAUTHORS:20120730-121345445

Lee, D. H. and Nicolet, M. -A. (1969) Thermal noise in double injection. Physical Review, 184 (3). pp. 806-808. ISSN 0031-899X http://resolver.caltech.edu/CaltechAUTHORS:LEEpr69

Rodriguez, V. and Nicolet, M-A. (1969) Drift velocity of electrons in silicon at high electric fields from 4.2° to 300°K. Journal of Applied Physics, 40 (2). pp. 496-498. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:RODjap69

Bilger, H. R. et al. (1968) Noise and Equivalent Circuit of Double Injection. Journal of Applied Physics, 39 (13). pp. 5913-5918. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120827-112350834

Nicolet, M.-A. and Bilger, H. R. and McCarter, E. R. (1966) Noise suppression in a double-injection silicon diode. Applied Physics Letters, 9 (12). pp. 434-436. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:NICapl66

Nicolet, M-A. (1966) Unipolar space-charge-limited current in solids with nonuniform spacial distribution of shallow traps. Journal of Applied Physics, 37 (11). pp. 4224-4235. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:NICjap66

Baron, R. and Nicolet, M-A. and Rodriguez, V. (1966) Differential Step Response of Unipolar Space-Charge-Limited Current in Solids. Journal of Applied Physics, 37 (11). pp. 4156-4158. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120827-110918315

Denda, S. and Nicolet, M-A. (1966) Pure Space-Charge-Limited Electron Current in Silicon. Journal of Applied Physics, 37 (6). pp. 2412-2424. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120828-070404189