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Pretorius, R. et al. (1977) Growth mechanism for solid-phase epitaxy of Si in the Si <100>/Pd2Si/Si(amorphous) system studied by a radioactive tracer technique. Journal of Applied Physics, 48 (7). pp. 2886-2890. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:PREjap77

Pretorius, R. et al. (1977) Radioactive silicon as a marker in thin-film silicide formation. Applied Physics Letters, 30 (10). pp. 501-503. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:PREapl77

Pretorius, R. et al. (1976) Dissociation mechanism for solid-phase epitaxy of silicon in the Si <100>/Pd2Si/Si (amorphous) system. Applied Physics Letters, 29 (9). pp. 598-600. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:PREapl76

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