Number of items: 6.
Article
Grimaldi, M. G.
et al.
(1981)
Epitaxial growth of amorphous Ge films deposited on single-crystal Ge.
Journal of Applied Physics, 52
(3).
pp. 1351-1355.
ISSN 0021-8979
http://resolver.caltech.edu/CaltechAUTHORS:GRIjap81
Campisano, S. U.
et al.
(1980)
Laser pulse annealing of ion-implanted GaAs.
Journal of Applied Physics, 51
(1).
pp. 295-298.
ISSN 0021-8979
http://resolver.caltech.edu/CaltechAUTHORS:CAMjap80
Lau, S. S.
et al.
(1979)
Solar furnace annealing of amorphous Si layers.
Applied Physics Letters, 35
(4).
pp. 327-329.
ISSN 0003-6951
http://resolver.caltech.edu/CaltechAUTHORS:LAUapl79
Tandon, J. L.
et al.
(1979)
Pulsed-laser annealing of implanted layers in GaAs.
Applied Physics Letters, 34
(9).
pp. 597-599.
ISSN 0003-6951
http://resolver.caltech.edu/CaltechAUTHORS:TANapl79b
Lau, S. S.
et al.
(1978)
Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation.
Applied Physics Letters, 33
(3).
pp. 235-237.
ISSN 0003-6951
http://resolver.caltech.edu/CaltechAUTHORS:LAUapl78b
Lau, S. S.
et al.
(1978)
Epitaxial growth of deposited amorphous layer by laser annealing.
Applied Physics Letters, 33
(2).
pp. 130-131.
ISSN 0003-6951
http://resolver.caltech.edu/CaltechAUTHORS:LAUapl78a
This list was generated on Wed Jun 19 17:59:56 2013 PDT.