Lee, C. P. and Gover, A. and Margalit, S. and Samid, I. and Yariv, A. (1977) Barrier-controlled low-threshold pnpn GaAs heterostructure laser. Applied Physics Letters, 30 (10). pp. 535-538. ISSN 0003-6951. doi:10.1063/1.89225. https://resolver.caltech.edu/CaltechAUTHORS:LEEapl77a
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Abstract
Incorporation of GaAlAs potential barrier layers into the active regions of a heterostructure pnpn injection laser makes it possible to design Shockley diode lasers with low (3 kA/cm^2) room-temperature threshold currents.
| Item Type: | Article | ||||||
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| Additional Information: | © 1977 American Institute of Physics. Received 1 November 1976; accepted for publication 11 March 1977. Research supported by the Office of Naval Research and the National Science Foundation. | ||||||
| Subject Keywords: | GALLIUM ARSENIDES, SEMICONDUCTOR LASERS, THRESHOLD ENERGY, SCHOTTKY BARRIER DIODES, EMISSION SPECTRA, MODULATION, ALUMINIUM ARSENIDES, FABRICATION | ||||||
| Issue or Number: | 10 | ||||||
| DOI: | 10.1063/1.89225 | ||||||
| Record Number: | CaltechAUTHORS:LEEapl77a | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:LEEapl77a | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 10027 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Tony Diaz | ||||||
| Deposited On: | 07 Apr 2008 | ||||||
| Last Modified: | 08 Nov 2021 21:04 |
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