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Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures

Ting, D. Z.-Y. and Cartoixà, X. and McGill, T. C. and Smith, D. L. and Schulman, J. N. (2002) Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures. Journal of Computational Electronics, 1 (1-2). pp. 147-151. ISSN 1569-8025. doi:10.1023/a:1020748702245.

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The Rashba effect resonant tunneling diode is a candidate for achieving spin polarizing under zero magnetic field using only conventional non-magnetic III–V semiconductor heterostructures. We point out the challenges involved based on simple arguments, and offer strategies for overcoming these difficulties. We present modeling results that demonstrate the benefits of the InAs/GaSb/AlSb-based asymmetric resonant interband tunneling diode (a-RITD) for spin filtering applications.

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Additional Information:© 2002 Kluwer Academic Publishers. The authors thank D.H. Chow and T.F. Boggess for helpful discussions. This work was supported by the Defenses Advanced Research Projects Agency (DARPA) Spins in Semiconductors (SpinS) program.
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Subject Keywords:resonant tunneling, interband tunneling, Rashba effect, spin filter
Issue or Number:1-2
Record Number:CaltechAUTHORS:20200103-162108300
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Official Citation:Ting, DY., Cartoixà, X., McGill, T. et al. Journal of Computational Electronics (2002) 1: 147.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:100517
Deposited By: Tony Diaz
Deposited On:05 Jan 2020 00:01
Last Modified:16 Nov 2021 17:54

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