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Pushing the limits of macroporous silicon etching

Matthias, S. and Müller, F. and Schilling, J. and Gösele, U. (2005) Pushing the limits of macroporous silicon etching. Applied Physics A: Materials Science and Processing, 80 (7). pp. 1391-1396. ISSN 0947-8396. doi:10.1007/s00339-004-3193-x.

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We present a detailed investigation of the fabrication of almost perfect three-dimensional microstructures grown by a photoelectrochemical etching process. The focus is directed on the physical effects that have limited the achievable pore shapes to very smooth modulations. These limits can be overcome by an improved etching process allowing strongly modulated three-dimensional networks. In particular, the chronology of the growth of a single modulation is shown.

Item Type:Article
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Additional Information:© 2005 Springer-Verlag. Received: 10 December 2004; Accepted: 13 December 2004; Published online: 27 January 2005.
Subject Keywords:Silicon; Microstructure; Thin Film; Operating Procedure; Electronic Material
Issue or Number:7
Classification Code:PACS: 82.45.Cc; 82.45.Vp
Record Number:CaltechAUTHORS:20200116-160100324
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Official Citation:Matthias, S., Müller, F., Schilling, J. et al. Appl. Phys. A (2005) 80: 1391.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:100774
Deposited By: Tony Diaz
Deposited On:17 Jan 2020 00:13
Last Modified:16 Nov 2021 17:56

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